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Method for preparing lead-based ferroelectric thin film with controllable texture at low crystallization temperature

A ferroelectric thin film, low crystallization technology, applied in the direction of nanostructure manufacturing, nanotechnology, nanotechnology, etc., can solve the problems of unfavorable large-area Si integrated circuit applications, difficult texture control, high crystallization temperature, etc., to achieve low cost, The effect of smooth surface and low crystallization temperature

Inactive Publication Date: 2010-03-03
HARBIN INST OF TECH
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a low crystallization temperature in order to solve the problems of high crystallization temperature, difficult texture control, high cost and unfavorable application of large-area Si integrated circuits in the ferroelectric thin film preparation process of the existing method. Method for preparing texture-controllable lead-based ferroelectric thin film

Method used

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  • Method for preparing lead-based ferroelectric thin film with controllable texture at low crystallization temperature
  • Method for preparing lead-based ferroelectric thin film with controllable texture at low crystallization temperature
  • Method for preparing lead-based ferroelectric thin film with controllable texture at low crystallization temperature

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specific Embodiment approach 1

[0010] Specific implementation mode 1: The preparation of a texture-controllable lead-based ferroelectric thin film at a low crystallization temperature in this implementation method is realized by the following steps: 1. Deposit a layer of lanthanum titanate-calcium-lead-based iron with a thickness of 5-20 nm on the substrate The electric thin film is then annealed and crystallized at a temperature of 400-450°C to obtain a seed layer film A; 2. On the seed layer film A, continue to deposit a lead titanate-based ferroelectric film with a thickness of 200-300nm, Then annealing and crystallization treatment is carried out at a temperature of 450-700° C. to obtain a lead-based ferroelectric film with a controllable texture; wherein the molecular formula of the lanthanum titanate-calcium-lead-based ferroelectric film in step 1 is (Pb 1-x-y La x Ca y ) Ti 1-x / 4 O 3 , wherein 0≤X≤0.24, 0≤Y≤0.24; in the second step, the lead titanate ferroelectric film is a lead titanate ferroelec...

specific Embodiment approach 2

[0013] Embodiment 2: The difference between this embodiment and Embodiment 1 is that the substrate in step 1 is Pt / Ti / SiO 2 / Si substrate. Other steps and parameters are the same as those in Embodiment 1.

specific Embodiment approach 3

[0014] Embodiment 3: The difference between this embodiment and Embodiment 1 or 2 is that the thickness of the lanthanum calcium lead-based ferroelectric thin film in step 1 is 10 nm. Other steps and process parameters are the same as those in Embodiment 1 or 2.

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Abstract

The invention relates to a method for preparing a lead-based ferroelectric thin film with controllable texture at low crystallization temperature. The method can solve the problems that the existing method has too high crystallization temperature during the process of preparing the ferroelectric thin film, is hard to control the texture, has high cost, and is not beneficial to applying a large-area Si integrated circuit. The method comprises the following steps of: 1, preparing a seed layer thin film A; and 2, continuously depositing a lead-based titanate ferroelectric thin film on the thin film A, then carrying out annealing and crystallization treatment, and changing the thickness of the seed layer thin film A for obtaining the lead-based ferroelectric thin film with the controllable texture. The method completes the preparation at the lower crystallization temperature, and the prepared thin film not only has excellent ferroelectric performance, but also has the advantages of strongtexture, smooth surface of the thin film and dense property. The method further has the advantages of simple technology, simple equipment, cheap price of raw materials, low cost and easy integration of devices, and is applicable to industrial production.

Description

technical field [0001] The invention relates to a method for preparing a lead-based ferroelectric thin film. Background technique [0002] In recent years, ferroelectric ceramics and their thin film materials, especially lead-based ferroelectric thin films, have been widely used in the fields of microelectronics and optoelectronics, especially high-capacity It has broad application prospects in storage and uncooled infrared detectors. However, there are some problems in the preparation method of ferroelectric thin film: as (1) the crystallization temperature is too high in the process of preparing ferroelectric thin film, which is not conducive to the application of large-area Si integrated circuits; (2) in the process of preparing ferroelectric thin film Medium texture is difficult to control; in (application date: on June 24th, 2005, application number is: 200510021154.X, title is called: the preparation method of single orientation ferroelectric thin film with biaxial te...

Claims

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Application Information

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IPC IPC(8): B82B3/00C04B35/462C04B35/491C04B35/495C04B35/622
Inventor 费维栋迟庆国李伟力
Owner HARBIN INST OF TECH
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