Unlock instant, AI-driven research and patent intelligence for your innovation.

Electronic device

A technology of electronic devices and voltage sources, which is applied in static memory, read-only memory, instruments, etc., can solve the problems of increasing design complexity, cracking coding methods, increasing manufacturing costs, etc., and achieves low manufacturing cost, high reliability, and easy Achieved effect

Active Publication Date: 2013-03-27
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, adopting the encoding method requires the design of a specific encoding method, which increases the complexity of the design. Once there is a defect in the encoding design, the encoding method is likely to be cracked; moreover, each electronic device is provided with a decoding unit, which increases the complexity of the design. manufacturing cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electronic device
  • Electronic device
  • Electronic device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] see image 3 , image 3 It is a schematic diagram of an electronic device according to Embodiment 1 of the present invention. The electronic device 1 includes a storage unit 10, the electronic device 1 is connected to an external signal input device 3 through a wire 2, a first flash transistor 12 is connected to the wire 2 in the electronic device 1, and the first flash transistor 12 The drain 121 is connected to the wire 2; the gate 120 is connected to a voltage source 13, and the source 122 is grounded.

[0033] In this implementation, the flash memory transistor can be selected from one of the following transistors: split gate flash transistor (split gate flash), stack gate flash transistor (stack gate flash), non-volatile read-only memory (NROM), phase change memory (PCROM), MirrorBit flash memory.

[0034] When the signal input device 3 writes information to the storage unit 10 in the electronic device 1, the voltage bias of the voltage source 13 connected to th...

Embodiment 2

[0038] Usually, in order to obtain a better protection effect, it is necessary to ensure that the resistance value of the first flash memory transistor 12 is smaller than the series resistance formed between the wire 2 and the memory unit 10 in the on state, so that any electrons appearing on the wire 2 All signals are reliably conducted through the first flash memory transistor 12 and grounded, and will not be transmitted into the storage unit 10 . Therefore, the resistance value of the flash memory transistor can be reduced according to actual needs.

[0039] see Figure 4 , Figure 4 It is a schematic diagram of an electronic device according to Embodiment 2 of the present invention. The flash transistor group in this embodiment includes first and second flash transistors combined in parallel. The drain 121 of the first flash transistor 12 and the drain 141 of the second flash transistor 14 are connected to the wire 2, the source 122 and the source 142 are connected to t...

Embodiment 3

[0042] see Figure 5 , Figure 5 It is a schematic diagram of an electronic device according to Embodiment 3 of the present invention. The flash memory transistor group in this embodiment further includes a resistance adjustment unit, and the resistance adjustment unit is composed of at least the third, fourth, and fifth flash memory transistors combined in series and parallel. The fourth flash memory transistor 16 is connected in parallel with the fifth flash memory transistor 17, then connected in series with the third flash memory transistor 15, and then connected in parallel with the first flash memory transistor 12 and the second flash memory transistor 14, wherein,

[0043] The drain 161 of the fourth flash transistor 16 and the drain 171 of the fifth flash transistor 17 are connected to the source 152 of the third flash transistor 15, and the source 162 of the fourth flash transistor 16 and the source of the fifth flash transistor 17 172 common ground;

[0044] The d...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an electronic device, comprising a voltage source and at least one memory unit. A memory unit of the electronic device is connected with an external signal input device througha conducting wire; a flash memory transistor is connected to the conducting wire in the electronic device; a drain electrode of the flash memory transistor is connected with the conducting wire, anda source electrode of the flash memory transistor is connected with the ground; and the voltage source is connected with the grid electrode of the flash memory transistor. The flash memory transistoris connected to the conducting wire in the electronic device, and the voltage source connected with the grid electrode is started after the read-in operation is accomplished so that the drain electrode and the source electrode of the flash memory transistor are conducted to generate current between the drain electrode and the source electrode. Then, the voltage of the grid electrode is offset to the state no less than the threshold voltage of the transistor so that the current is generated between the drain electrode and the source electrode, any signals outputted from the outside can flow through the drain electrode and the source electrode to a grounding end through the conducting wire, the information in the memory unit is prevented from being modified, and then the information safety in the memory unit is ensured.

Description

technical field [0001] The invention relates to a device, in particular to an electronic device with the function of safely storing information. Background technique [0002] The current electronic equipment or electronic devices have the function of storing information, such as memory cards, smart cards and other products. Usually, when such electronic devices are manufactured, the information to be stored is stored in them in advance. When the electronic devices are assembled and delivered When used by the user, the information has been stored in such electronic devices, and the user can read the information through other ports and interfaces. [0003] For some electronic devices containing user privacy, confidential information or financial information, how to prevent the electronic device from being modified by others or external signal interference (such as noise, abnormal operation, etc.) to change the stored information, so as to ensure Information security is partic...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F21/64G11C16/02G06F21/79
Inventor 许丹
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP