A barron device manufactured by using integrated passive component process

A passive component and balun technology, applied in the field of balun, can solve the problems of large communication device space and increased substrate area, etc.

Active Publication Date: 2010-03-17
ADVANCED SEMICON ENG INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this way, the area for configuring the balun manufactured by the LTCC process and the area for configuring the radio frequency transceiver ...

Method used

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  • A barron device manufactured by using integrated passive component process
  • A barron device manufactured by using integrated passive component process
  • A barron device manufactured by using integrated passive component process

Examples

Experimental program
Comparison scheme
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Embodiment Construction

[0042] Please refer to figure 1 , which is a schematic diagram of a balun. The balun includes transmission lines 102 and 104, and capacitors C1, C2 and C3. One end of the transmission line 102 is electrically connected to an unbalanced port (Unbalance Port) 110 , and the other end of the transmission line 102 is grounded. One end of the transmission line 104 is electrically connected to the balance port (BalancePort) 112 and the capacitor C2, and the other end of the transmission line 104 is electrically connected to the balance port 114 and the capacitor C3.

[0043] Please refer to figure 2 , which is shown as figure 1 Equivalent circuit diagram of the balun. The transmission line 102 can be equivalent to the inductor L1, and the transmission line 104 can be equivalent to the inductor L2. For AC signals, the midpoint of the transmission line 104 can be regarded as a virtual ground, so the center of the inductance L2 of the equivalent transmission line 104 is equivalent...

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PUM

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Abstract

The invention discloses a barron device manufactured by using integrated passive component process, which comprises a cardinal plate, a first coplanar helix structure and a second coplanar helix structure; at least two first left semi- coils of the first coplanar helix structure is electrically connected with two corresponding first right semi- coils through a first obliquity structure; at least twain second left semi- coils of the second coplanar helix structure is electrically connected with two corresponding right semi- coils through a second obliquity structure; two ends of the second coplanar helix structure is electrically connected with the second left semi- coil and the second right semi- coil in the most inner circle separately; the first left semi- coil and the second left semi-coil is placed overlapping; and the first right semi- coil and the second right semi- coil are placed overlapping.

Description

technical field [0001] The present invention relates to a balun circuit, and more particularly to a balun circuit fabricated using an Integrated Passive Device (IPD) process. Background technique [0002] Generally speaking, when the antenna in the communication device receives the wireless signal, the single-port electrical signal output by the antenna is output to a balun. The balun will convert the single-port electrical signal into a dual-port electrical signal, and output it to a radio frequency (Radio Frequency, RF) transceiver (Transceiver) for processing. [0003] A current balun is realized by a low temperature co-fired ceramic (LTCC) process. However, the balun manufactured by this LTCC process must first be electrically connected to a substrate by Surface-Mount Technology (SMT) before it can be electrically connected to the RF transceiver chip on the substrate. In this way, the area for configuring the balun produced by the LTCC process and the area for configur...

Claims

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Application Information

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IPC IPC(8): H01P5/10
Inventor 陈纪翰
Owner ADVANCED SEMICON ENG INC
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