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Non-volatile multilevel memory cells with data read of reference cells

A technology of memory cells and reference cells, applied in read-only memory, digital memory information, static memory, etc., can solve the problems of variable and unreliable memory cells

Inactive Publication Date: 2013-03-20
MICRON TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] A memory cell affected by a data degradation mechanism may become unreliable, for example, the logical value read from the cell may not necessarily be the logical value written to the cell

Method used

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  • Non-volatile multilevel memory cells with data read of reference cells
  • Non-volatile multilevel memory cells with data read of reference cells
  • Non-volatile multilevel memory cells with data read of reference cells

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Embodiment Construction

[0026] figure 1 is a block diagram of an electronic system 100 with a memory device 104 in accordance with an embodiment of the invention. In system 100 , memory device 104 (eg, NAND flash memory device 104 ) is coupled to controller 166 via interface 122 . Controller 166 may provide access to memory device 104 via interface 106 from an external host (not shown), such as a personal computer, cellular telephone, digital camera, personal digital assistant, or other external host device. In various embodiments, controller 166 may be coupled to more than one memory device, eg, 104 .

[0027] exist figure 1 In the embodiment illustrated in , the controller 166 includes a control state machine 110 (eg, an embedded processor 110 ), which can direct the internal operation of the memory device 104 . For example, control state machine 110 may perform various functions including managing one or more memory arrays 108, directing data accesses, updating internal control registers and ta...

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Abstract

Embodiments of the present disclosure provide methods, devices, modules, and systems for non-volatile multilevel memory cell data retrieval with data read of reference cells. One method includes programming at least one data cell of a number of data cells coupled to a selected word line to a target data threshold voltage (Vt) level corresponding to a target state; programming at least one reference cell of a number of reference cells coupled to the selected word line to a target reference Vt level, the number of reference cells interleaved with the number of data cells; determining a reference state based on a data read of the at least one reference cell; and changing a state read from the at least one data cell based on a change of the at least one reference cell.

Description

technical field [0001] The present invention relates generally to semiconductor devices and more particularly to memory devices having non-volatile memory cells. Background technique [0002] Memory devices are typically provided in computers or other electronic devices as internal semiconductor integrated circuits. There are many different types of memory, including random access memory (RAM), read only memory (ROM), dynamic random access memory (DRAM), synchronous dynamic random access memory (SDRAM), and flash memory, among others memory. [0003] Flash memory devices are used as non-volatile memory in a wide variety of electronic applications. Flash memory devices typically use one-transistor memory cells that allow for high storage density, high reliability, and low power consumption. [0004] Uses for flash memory include memory for personal computers, personal digital assistants (PDAs), digital cameras, and cellular telephones. Program code and system data, such a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/34G11C11/56
CPCG11C16/349G11C16/3418G11C11/5628G11C16/0483G11C2211/5634G11C11/5642G11C16/34G11C16/12G11C16/08
Inventor 维沙尔·萨林荣·盛·赫埃弗朗姬·F·鲁帕尔瓦尔
Owner MICRON TECH INC