High trigger current SCR and ESD protective device

Abstract

The invention relates to a high trigger current SCR and ESD protective device, comprising a P-type doped semiconductor substrate, an N-type doped well and a P-type doped well are respectively arranged on the P-type doped semiconductor substrate, an N-type doped semiconductor area and a P-type doped semiconductor area are arranged in the N-type doped well, the N-type doped semiconductor area and the P-type doped semiconductor area are arranged in the P-type doped well, an anode metal layer and a metal layer are respectively connected above the N-type doped semiconductor area and the P-type doped semiconductor area on the surface of the N-type doped well, a metal layer and a cathode metal layer are respectively connected above the N-type doped semiconductor area and the P-type doped semiconductor area on the surface of the P-type doped well, and the anode metal layer and the metal layer are connected by a diode which is formed by the P-type doped semiconductor area and the N-type doped semiconductor area, and the metal layer and the cathode metal layer are directly connected by metal. The protective device can effectively improve the trigger current and is suitable for ESD protection in a high-voltage integrated circuit.

Description

technical field [0001] The invention belongs to the technical field of high-voltage integrated circuits, relates to an electrostatic discharge protection device, and more specifically relates to a lateral semiconductor silicon control device suitable for an electrostatic discharge (Electro-Static Discharge, ESD) protection circuit in a high-voltage environment. rectifier controller. Background technique [0002] With the growing role of multimedia applications in everyone's daily life and the ever-increasing relationship between computers and consumer electronics, there will be a continuous demand for increased portability and functionality. This requires a higher level of integration of components - the general trend is to result in sensitive and expensive chips, the risk of damage due to ESD surges in the presence of external interfaces is also increasing. As products such as cell phones, digital cameras, MP3 players, and PDAs provide more functionality, they also have mo...

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Problems solved by technology

[0004] However, in the application field of high-voltage integrated circuits, the current density is high, and the PN junction of the device is very hot, which makes ESD protection of high-voltage integrated circuits very difficult to do.

Moreover, using SCR as an ESD protection device in a high-voltage integrated circuit has problems such as uneven triggering and low triggering current.

Especially when the trigger current is low, it is easy to cause the SCR device to be falsely triggered under the influence of external noise interference, and a latch-up phenomenon occurs. The welding block is clamped at a lower voltage, which interferes with normal signal transmission. This makes ESD protection meaningless, so we must take measures to increase the trigger current of the SCR device

[0005] Some people in foreign countries have proposed to use an SCR and an NMOS together to form an ESD protection device, which can greatly increase the trigger current of the SCR. However, due to the introduction of an NMOS tube, it will obviously increase the complexity of the process and increase the area of ​​the chip, which is not conducive to chip integration.

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