Electrostatic damage protective device with noise immunologic function and control method thereof

A technology of electrostatic destruction and protection devices, which is applied in the direction of circuit devices, emergency protection circuit devices, emergency protection circuit devices for limiting overcurrent/overvoltage, etc., can solve problems such as malfunctions, and achieve the effect of improving accuracy

Inactive Publication Date: 2010-05-12
VIEWSIL MICROELECTRONICS KUSN
View PDF0 Cites 19 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These pin voltage fluctuations that are not caused by ESD are called noise fluctuations. In the design, it is necessary to avoid malfunction of the ESD protection circuit in the noise fluctuations

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Electrostatic damage protective device with noise immunologic function and control method thereof
  • Electrostatic damage protective device with noise immunologic function and control method thereof
  • Electrostatic damage protective device with noise immunologic function and control method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0044] figure 1 It shows the principle diagram of the electrostatic damage protection device with noise immunity function provided by the present invention; figure 2 A schematic diagram showing voltages generated by electrostatic fluctuations and noise fluctuations. Those skilled in the art understand that, figure 1 The detection circuit 1, the active drive circuit 2, and the current discharge circuit 3 shown in the figure constitute the basic circuit of the electrostatic damage protection device in the prior art, wherein the detection circuit 1 is used to detect an electrostatic discharge event, and when an electrostatic discharge is detected , the detection circuit 1 controls the current discharge circuit 3 to discharge the ESD current through the active drive circuit 2 . More specifically, due to the short rise time of the ESD voltage, the current discharge circuit 3 can be turned on within a short period of time when it occurs to form a temporary low resistance between ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides an electrostatic damage protective device with a noise immunologic function, which comprises a detection circuit, an active drive circuit, a current discharge circuit and an alternating-current voltage division circuit, wherein the detection circuit comprises a capacitive device and a resistive device; the active drive circuit comprises a one-level or multi-level inverter, and can contain no inverter of the part of the circuit under a specific application; and the current discharge circuit comprises an N-type transistor or a P-type transistor. The electrostatic damage protective device also comprises the alternating-current voltage division circuit which is connected to two ends of the resistive device of the detection circuit in parallel. The electrostatic damage protective device pre-adjusts the input end voltage of the active drive circuit when the electrostatic damage protective device is influenced by electrostatic fluctuations by using the voltage division action of the alternating-current voltage division circuit under an alternating-current environment so that the current discharge circuit cannot be turned on by mistake, and the electrostatic damage protective device has the noise immunologic function.

Description

technical field [0001] The invention relates to an electrostatic damage protection device, in particular to an electrostatic damage protection device for an integrated circuit chip, in particular to an electrostatic damage protection device with noise immunity function. Background technique [0002] In the reliability design of CMOS integrated circuits, an important link is the design of electrostatic discharge (ESD, electrostatic discharge) protection circuits. Statistics show that more than 1 / 3 of the failures of integrated circuits are caused by ESD. However, the ESD phenomenon exists in the whole process of integrated circuit production, packaging, transportation and use, so an effective way to improve the reliability of integrated circuits is to add appropriate ESD protection circuits inside or / and outside the chip according to different needs. [0003] For integrated circuits, electrostatic discharge is usually described by three physical models, namely human body mode...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H02H9/04H01L23/60
Inventor 刘连杰罗言刚
Owner VIEWSIL MICROELECTRONICS KUSN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products