Base region structure of triode

Abstract

The invention provides a base region structure of a triode. The triode comprises an emitter region, a base region and a collector region, wherein the base region is positioned between the emitter region and the collector region, and comprises an undoped polycrystalline silicon layer, a germanium-silicon layer or germanium-silicon carbon layer and a doped polycrystalline silicon layer which are formed in turn from one side of the collector region to one side of the emitter region; the undoped polycrystalline silicon layer is connected with the collector region; and the doped polycrystalline silicon layer is connected with the emitter region. In the base region structure of the triode, a layer of the undoped polycrystalline silicon layer is deposited between the germanium-silicon layer or the germanium-silicon carbon layer and the collector region of the base region so that the problem of lattice mismatch between germanium and silicon caused by growing the germanium-silicon layer or the germanium-silicon carbon layer on a collector electrode is solved, which is in favor of alignment operations of a subsequent photolithographic process.

Description

technical field [0001] The invention relates to the technical field of integrated circuit manufacturing technology, in particular to a triode base region structure. Background technique [0002] The transistor is one of the most commonly used basic components. The function of the transistor is mainly to amplify the current. It is the core component of the electronic circuit. The basic component of the large-scale integrated circuit is the transistor. [0003] The basic structure of the triode is as follows figure 1 As shown, two PN junctions that are very close to each other are made on a semiconductor substrate. The two PN junctions divide the positive semiconductor into three parts. The middle part is the base region 12, and the two sides are the emitter region 11 and the collector region 13. , There are two kinds of arrangements, PNP and NPN, and the corresponding electrodes are drawn from the three regions, which are base b, emitter e and collector c. The PN junction b...

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Problems solved by technology

[0006] In order to solve the problem of lattice mismatch between germanium and silicon in the growth of silicon germanium layer or silicon germanium carbon layer on the collector electrode in the prior art, the present invention provides a base electrode without lattice mismatch between germanium and silicon structure

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