Broad-spectrum white-light LED structure and growing method

Abstract

The invention provides a broad-spectrum white-light LED structure. A GaN buffer layer and a GaN support layer are arranged on a sapphire substrate or a silicon substrate, wherein the thickness of the GaN support layer is over 50 to 2,000nm; and the thickness of an N type GaN is 20 to 1,000nm, and the concentration of the N type GaN is 5*1,018cm-1. A blue light wavelength quantum well material, a blue-green or green quantum well material and a reddish yellow light or red light quantum well material are sequentially grown on the N type GaN, wherein a blue light quantum well is of an InxGa1-xN / GaN multi-quantum well structure of 1 to 10 periods, which is 2 to 20nm and 4 to 25nm thick respectively, and the x is between 0.1 and 0.18; the green light quantum well is of the InxGa1-xN / GaN multi-quantum well structure of 1 to 10 periods, which is 2 to 20nm and 4 to 25nm thick respectively, and the x is between 0.18 and 0.32; and the reddish yellow light or red light quantum well is of the InxGa1-xN / GaN multi-quantum well structure of 1 to 10 periods, which is 2 to 20nm and 4 to 25nm thick respectively, and the x is over 0.32. A three-color GaN substrate white-light LED structure is obtained by the invention.

Description

technical field [0001] The invention relates to a novel method for synthesizing and growing a wide-spectrum white LED structural material and device preparation, in particular to a method for growing a broad-spectrum white LED structural material on a sapphire substrate by using metal organic chemical vapor phase epitaxy MOCVD technology. Background technique [0002] Since Nakamura et al. of Nichia Corporation successfully developed GaN-based blue light-emitting diodes (LEDs) in 1991, research on III-nitride semiconductor materials and devices has developed rapidly. High-efficiency short-wavelength LEDs and lasers have been successfully developed [1,2]. The InGaN-based multiple quantum well (MQWs) structure is the core structure of all these devices. In-depth research and mastery of the optoelectronic properties of InGaN-based MQWs plays an important role in improving device performance. In InGaN-based MQWs, the localization of carriers has been widely studied, and it is ...

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Problems solved by technology

[0008] The method of realizing multi-level emission in the III-V nitride semiconductor structure, due to the limitation of material growth technology and material physical property research level in the past, there are few research results in this area

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