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Multi-layer flash-memory device, a solid hard disk and a truncation non-volatile memory system

A non-volatile, memory technology, used in static memory, read-only memory, information storage, etc., can solve the problem of short service life of flash memory devices, and achieve the effect of prolonging the service life

Active Publication Date: 2010-06-09
INFOMICRO ELECTRONICS SHENZHEN
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Problems solved by technology

[0011] The object of the present invention is to provide a multi-layer flash memory device, which aims to solve the problem of short service life of existing flash memory devices

Method used

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  • Multi-layer flash-memory device, a solid hard disk and a truncation non-volatile memory system
  • Multi-layer flash-memory device, a solid hard disk and a truncation non-volatile memory system
  • Multi-layer flash-memory device, a solid hard disk and a truncation non-volatile memory system

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Embodiment Construction

[0076] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0077] Figure 1A Demonstrated a smart memory switch interfaced with raw NAND-type flash memory devices. The smart storage switch 30 is connected to the host storage bus 18 through an upstream interface 34 . The smart storage switch 30 is also connected to the unprocessed NAND flash memory chip 68 through a physical block address (PBA) bus 473 . After the transactions from the virtual storage bridge 42 on the logical block address bus (logical block address, LBA) 38 are demultiplexed by the multiplexer / demultiplexer 41, they are sent to an NVM controller 76, and the NVM controller 76 converts the ...

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Abstract

The invention is suitable for memory field and provides a multi-layer flash-memory device, a solid hard disk and a truncation non-volatile memory system. The multi-layer flash-memory device comprises an unprocessed NAND flash-memory chip read by a non-volatile memory controller by a physical block address, wherein the non-volatile memory controller is arranged on a flash-memory module or on a system plate of the solid hard disk and changes the logic block address into physical block address and an intelligent memory office management device controls the data truncation and interlace between the channels of flash-memory modules at the high layer and the non-volatile memory controller controls the further interlace and remapping in the channels, therefore the life of the flash-memory device is prolonged.

Description

technical field [0001] The invention relates to flash-memory solid-state-drive devices, in particular to an intelligent storage switch connected with multiple flash memory endpoints. Background technique [0002] Host systems, such as personal computers (PCs), store large amounts of data in mass storage devices, such as hard disk drives (HDDs). Since the minimum read-write unit is a page, and the size of each page is equal to several 512-byte sectors, mass storage devices can be addressed by blocks rather than by bytes. Flash memory is replacing hard disks and optical disks as the preferred mass storage medium. [0003] NAND-type flash memory is non-volatile, so it is very suitable for portable data storage devices. Compared with NOR-type flash memory, NAND-type flash memory has higher data density and is cheaper. [0004] However, NAND-type flash memory has limitations. In the flash memory unit, data is stored in binary form, that is, two numbers of 1 and 0. One limita...

Claims

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Application Information

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IPC IPC(8): G11C16/02G11C16/06
Inventor 李中和俞一康马志刚
Owner INFOMICRO ELECTRONICS SHENZHEN
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