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Photoetching pretreating method and photoetching method

A pretreatment and lithography technology, applied in the direction of optics, optomechanical equipment, instruments, etc., can solve problems such as obstacles and influences on shallow junctions

Inactive Publication Date: 2010-06-16
SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP
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  • Abstract
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  • Claims
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Problems solved by technology

In this way, the deposited residue 10 may extend to the active region 11 near the polycrystalline gate 12 , so that the ions that should be implanted into the active region 11 are captured by the residue 10 when the ion implantation depth is small. hindered, thereby affecting the shallow junction formed by the active region 11 after ion implantation

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  • Photoetching pretreating method and photoetching method
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Embodiment Construction

[0034] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below with reference to the accompanying drawings and examples.

[0035] figure 2 It is an exemplary flow chart of the photoresist pretreatment method in the embodiment of the present invention. Such as figure 2 As shown, the method is performed prior to spin-coating photoresist and includes the following steps:

[0036] In step 201, the semiconductor substrate is put into heat treatment equipment, and the heat treatment equipment performs oxygen-free heat treatment on the semiconductor substrate at any temperature between 900°C and 1100°C. Among them, anaerobic heat treatment is preferably performed at 1000°C.

[0037] In this step, multiple semiconductor substrates can be put into the heat treatment equipment at the same time to improve the heat treatment efficiency; and, since the heat treatment equipment perf...

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Abstract

The invention discloses a photoetching pretreating method and a photoetching method. In the invention, before spin coating the photoresist, a semiconductor substrate is thermally treated without oxygen at the temperature of 900 DEG C-1100 DEG C for a duration time of 25 seconds-35 seconds, so that basic compounds on the surface of the semiconductor substrate are decomposed, and in the following exposure process related to photoetching, photoacid generated by the photoresist spin coated on the surface of the semiconductor substrate can not chemically react with the basic compounds, thus not generating residue formed by depositing in the photoresist at the bottom of a groove.

Description

technical field [0001] The invention relates to semiconductor processing technology, in particular to a photolithography pretreatment method and a photolithography method. Background technique [0002] In the existing photolithography process, the photoresist is directly spin-coated on the surface of the semiconductor substrate, and then the photoresist is selectively exposed through the photolithography plate, and then the photosensitive part of the photoresist is removed by developing and cleaning, so that the spin Grooves corresponding to the patterns in the photoresist are formed in the coated photoresist. In the ion implantation process after photolithography, ions can be implanted into corresponding positions of the semiconductor substrate through the trench. [0003] However, since the photoresist that is spin-coated on the surface of the semiconductor substrate will generate photoacid during the exposure process, and there are alkaline compounds on the surface of th...

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Application Information

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IPC IPC(8): H01L21/00H01L21/027G03F7/00
Inventor 吴永玉
Owner SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORP