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Method for preparing contact hole in semiconductor device

A contact hole and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as variation, and achieve the effect of improving the etching selection ratio and reducing the thickness

Active Publication Date: 2011-11-02
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In this case, if the photoresist is barely thickened, the control of the critical dimension of the lithography will become worse.

Method used

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  • Method for preparing contact hole in semiconductor device
  • Method for preparing contact hole in semiconductor device
  • Method for preparing contact hole in semiconductor device

Examples

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Embodiment Construction

[0023] In the preparation method of the contact hole in the semiconductor device of the present invention, after the device is completed, take the MOS transistor as an example (see figure 1 ), the device part is mainly to form a shallow trench isolation region 11, a source region 12, a drain region 13, a gate oxide 14, a gate 16, sidewalls 15 on both sides of the gate on the substrate 10, and deposit a pre-metal dielectric After layer 18, the specific implementation process is (see Figure 9 ):

[0024] 1) The position of the contact hole is defined by photolithography, so that the photoresist 19 covers the pre-metal dielectric layer at the contact hole. The photolithography process is a conventional process, including spin-coating photoresist 19 on the metal pre-dielectric layer (see figure 1 ), use a photolithographic mask to expose, and then develop, so that the metal front dielectric layer on the contact hole position is covered with photoresist, while the photoresist at...

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Abstract

The invention discloses a method for preparing a contact hole in a semiconductor device. After the device is prepared and a front metal dielectric layer is deposited, the contact hole process with high depth-width ratio requirement is completed by once photoetching, double etching, double tungsten deposition and double chemical mechanical lapping.

Description

technical field [0001] The invention relates to a method for preparing a contact hole in a semiconductor device. Background technique [0002] In the development of semiconductor technology, it often occurs when the aspect ratio of the contact hole is large. For example, when the design rule is directly reduced from 0.13um to 0.11um, the film thickness of the contact hole remains unchanged, while The photolithography size is required to be reduced, so that the photoresist is not enough to etch. In this case, if the photoresist is barely thickened, the control of the critical dimension of the photolithography will be deteriorated. [0003] In the current contact hole preparation process, the contact hole photolithography is usually performed first to define the position of the contact hole, then the contact hole is etched, and then tungsten is deposited to fill the contact hole, and then the excess tungsten is removed by chemical mechanical grinding. Complete the entire con...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
Inventor 陈福成
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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