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Metal protruding block structure on connecting pad of circuit surface of semiconductor element and forming method

A technology of metal bumps and connection pads, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as unfavorable production costs and achieve the effect of reducing production costs

Inactive Publication Date: 2012-02-29
俞宛伶
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The method for forming metal bumps in the above-mentioned prior art must adopt an expensive under-bump metal layer manufacturing process in the manufacturing process, which is not conducive to the control of production costs

Method used

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  • Metal protruding block structure on connecting pad of circuit surface of semiconductor element and forming method
  • Metal protruding block structure on connecting pad of circuit surface of semiconductor element and forming method
  • Metal protruding block structure on connecting pad of circuit surface of semiconductor element and forming method

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Embodiment Construction

[0042] The implementation of the present invention will be described in more detail below in conjunction with the accompanying drawings, so that those skilled in the art can implement it after studying this specification.

[0043] see Figure 1A to Figure 1H , to show the steps of forming metal bumps on the connection pads of the semiconductor wafer according to the embodiment of the present invention.

[0044] Such as Figure 1A As shown, the connection pads 12 are located on the surface of the semiconductor die 10, and the semiconductor may be an integrated circuit, a transistor, a diode, or a thyristor. For the convenience of reference, the surface mentioned here is the circuit surface of the semiconductor die 10 . Please note that the semiconductor die 10 is actually part of a semiconductor wafer and may not have been singulated from the semiconductor wafer (not shown). A semiconductor wafer can have multiple dies 10 , and each semiconductor die 10 can have multiple conn...

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PUM

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Abstract

The invention discloses metal protruding block structure on a connecting pad of a circuit surface of a semiconductor element and forming method. The method comprises the following steps of: sequentially placing an insulating layer and a copper foil on the upper surface of the circuit surface of the semiconductor element; forming a via hole in the insulating layer and the copper foil on the connecting pad; at least forming a thin metal layer on the hole wall of the via hole, wherein the thin metal layer connects the copper foil and the connecting pad; forming a first plating resistant film on the upper surface of the copper foil, wherein the plating resistant film is provided with a first opening at least exposing out the via hole coated with the thin metal layer; and plating a metal material in the first opening to a proper thickness. The invention reduces the production cost because an expensive metal layer manufacture process below the protruding block is not used.

Description

technical field [0001] The invention relates to a semiconductor flip-chip package, in particular to a method for directly forming a metal bump without forming an under-bump metal layer on a connection pad of a semiconductor element, and the formed metal bump structure. Background technique [0002] Flip-chip packaging uses metal bumps to establish an electrical connection between the connection pads (I / O pads) of the semiconductor device and the package substrate or lead frame. In the prior art, an under bump metallurgy (UBM) needs to be formed between the metal bump and the connection pad of the semiconductor device. [0003] The UBM layer usually includes an adhesion layer, a barrier layer and a bonding layer, which are sequentially stacked on the connection pad from bottom to top. According to the materials used, bumps can be classified into tin-lead bumps, gold bumps, copper pillar bumps, and mixed metal bumps. [0004] The method of forming the bump on the UBM layer u...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/485H01L21/60
CPCH01L24/11H01L2224/11H01L2924/14H01L2924/00H01L2924/00012
Inventor 俞宛伶
Owner 俞宛伶