Wafer bearing device

Abstract

The invention discloses a wafer bearing device, which comprises a bearing platform provided with a central opening and a shielding piece, wherein the shielding piece is arranged in the central opening of the bearing platform and provided with an access. Since the shielding piece is arranged in the central opening of the bearing platform, the radio-frequency current and fluid in a fluid pipeline are mutually isolated by the shielding piece, the phenomenon that an electric arc mark is formed through an electric arc effect due to a conductive plasma generated by the fluid caused by being subjectto the radio-frequency electric energy action in the semiconductor production process can be avoided, the damage to a wafer and the bearing platform can be reduced, the service life of the wafer bearing device can be prolonged and the yield of products can be correspondingly improved.

Description

technical field [0001] The invention relates to a wafer carrying device. Background technique [0002] Generally, during the processing of semiconductor wafers, such as physical vapor deposition (PVD) or chemical vapor deposition (CVD), the reaction is carried out in a certain closed chamber. [0003] Taking the PVD process as an example, it is generally carried out in a processing device capable of generating plasma. Such a processing device has a reaction chamber in which a carrying device for holding a wafer to be processed is arranged. [0004] figure 1 To show a longitudinal sectional side view of an existing PVD device. Such as figure 1 As shown, the PVD device includes a carrier 10 having a central opening 100 and a fluid pipeline 12 corresponding to the central opening 100 of the carrier 10 . The carrier 10 can be, for example, an electrostatic chuck (E-Chuck), which has a suction function when it is connected with a radio frequency generator (RFPower) and gener...

AI Technical Summary

Problems solved by technology

[0005] However, if figure 1 As shown, since the carrying platform 10 has a certain thickness, there is a section of space for the gas to circulate at the central opening 100. When the gas passes through the space, it will be affected by the surrounding radio frequency electric energy, and a part of the gas will be excited. And the formation of conductive plasma (plasma), the plasma will cause the arc effect, so that the peripheral wall of the pipeline in the center of the carrier and the back of the wafer will form arc marks

The arc marks can scratch the wafer and affect the yield of the wafer

In addition, when the carrying platform 10 is maintained, it is also required to remove these arc marks. In this way, physical wiping or chemical reaction must be used to remove the arc marks, but this will often cause damage to the carrying platform 10 and affect its use. life

This is a big cost drain for expensive equipment

Images