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Method for manufacturing stacked film

A thin film and dielectric layer technology, applied in the field of making stacked thin films, can solve problems such as poor adhesion of oxide layers

Inactive Publication Date: 2010-07-21
UNITED MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Therefore, the main purpose of the present invention is to provide a method for making stacked films, so as to improve the above-mentioned known problem of undercutting due to poor adhesion of the oxide layer in the stacked films when making SONOS memory.

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  • Method for manufacturing stacked film
  • Method for manufacturing stacked film
  • Method for manufacturing stacked film

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Embodiment Construction

[0021] Please refer to Figure 1 to Figure 5 , Figure 1 to Figure 5 A schematic diagram of fabricating a patterned stacked film for a preferred embodiment of the present invention. Such as figure 1 As shown, firstly a semiconductor substrate 12 is provided, such as a substrate made of silicon, gallium arsenide, silicon on insulator (SOI) layer, epitaxial layer, silicon germanium layer or other semiconductor substrate materials. A stacked thin film 14 is then deposited on the semiconductor substrate 12 . Wherein, the stacked film 14 may be composed of multiple material layers, and each material layer may include various dielectric materials, such as oxides, nitrides, oxynitrides, metal oxides, or combinations thereof. In this embodiment, the stacked thin film 14 is preferably selected from a three-layer structure consisting of oxide layer-nitride layer-oxide layer (oxide-nitride-oxide, ONO). But the stacked film 14 is not limited to three layers and the material of each lay...

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Abstract

The invention discloses a method for manufacturing a stacked film, which comprises the following steps: firstly providing a semiconductor substrate, and then forming the stacked film on the semiconductor substrate, wherein the stacked film comprises a plurality of dielectric layers; then covering a hard mask on the stacked film, removing the partial hard mask and the parts uncovered by the hard mask in all the dielectric layers above the bottommost dielectric layer of the stacked film, and subsequently partially removing the bottommost dielectric layer in the stacked film.

Description

technical field [0001] The invention relates to a method for manufacturing a stacked thin film, especially a method for manufacturing a stacked thin film by matching a hard mask and a two-stage etching process. Background technique [0002] Non-volatile memory devices are widely used because of the characteristic that stored data will not be lost due to power supply interruption. Non-volatile memory devices widely used today include read-only-memory (ROM), programmable-read-only memory (programmable-read-only memory, PROM), erasable and programmable read-only memory memory (erasable-programmable-read-only memory, EPROM) and electronically erasable programmable read-only memory (electrically-erasable-programmable-read-only memory, EEPROM). Among them, the electronic erasable programmable read-only memory is different from other non-volatile memories in that they can use electrons to perform programming and erasing operations. [0003] The current research and development di...

Claims

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Application Information

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IPC IPC(8): H01L21/314H01L21/8239H01L21/033
Inventor 黄骏松施秉嘉杨乔麟黄启政
Owner UNITED MICROELECTRONICS CORP