Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Low-oxygen control system

A control system and control valve technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting the performance of microtransistors, and achieve the effect of reducing oxidation

Active Publication Date: 2010-07-28
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 15 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The influence of the natural oxide layer brings challenges to the thin film process technology. For the thin film process, the change of the film thickness caused by the oxygen molecules on the wafer surface will obviously affect the performance of the microtransistor.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Low-oxygen control system
  • Low-oxygen control system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0024] The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

[0025] The microenvironment refers to the environment exposed to before and after the heat treatment of the wafer in the equipment, that is, the environment in which the wafer is picked up and oxidized in the processing chamber in the present invention. Preferably, the heat treatment of the wafer is carried out in a vertical heat treatment device. Hypoxia in the present invention means that the oxygen concentration is lower than 10ppm.

[0026] as attached figure 1 As shown, the hypoxic control system according to the specific embodiment of the invention includes a nitrogen delivery device, a circulation fan 6 and a processing chamber 8 connected in seque...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to the field of semiconductor production devices and discloses a low-oxygen control system comprising a nitrogen gas conveying device, a circulating fan and a treatment chamber which are connected in sequence, wherein the outside of the treatment chamber is also connected with a circulating pipe and an oxygen analyzer; the other inlet of the oxygen analyzer is connected with the nitrogen gas conveying device; and the circulating fan is also provided with an air ventilating valve. The low-oxygen control system can control the oxygen concentration of a relative space (microenvironment), thereby effectively controlling the natural oxygen condition of a chip.

Description

technical field [0001] The invention belongs to the field of semiconductor production devices, and in particular relates to a low-oxygen control system in a wafer oxidation process. Background technique [0002] In semiconductor production, it is often necessary to go through a heat treatment process. After heat treatment, a defect-free regional protective layer is formed on the near surface layer of the wafer. In the semiconductor manufacturing process, the goal of wafer heat treatment is to grow a defect-free and uniform film according to the thickness requirement. The so-called thin film is a thin solid substance grown on a substrate, which can be a conductor, an insulating substance or a semiconductor material. Thin films can be silicon dioxide (SiO 2 ), silicon nitride (Si 3 N 4 ) Polysilicon and metals, etc. [0003] SiO 2 It is an intrinsic (pure) glass body with a melting point temperature of 1732°C. thermally grown SiO 2 It can be tightly adhered to the sili...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00
Inventor 林松赵星梅钟华
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com