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Method for improving luminescence decay of Eu3+ ion doped Lu2O3 film

A technology of luminescence attenuation and ion doping, applied in luminescent materials, chemical instruments and methods, etc., can solve the problems of low solubility and precipitation of alkoxides

Inactive Publication Date: 2010-08-11
SHANGHAI UNIV
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  • Claims
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Problems solved by technology

[0006] The preparation of materials through the sol-gel process generally requires metal alkoxides as precursor materials, but the solubility of Lu alkoxides in alcohol is relatively low, and it is easy to react violently with water and cause precipitation.

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  • Method for improving luminescence decay of Eu3+ ion doped Lu2O3 film
  • Method for improving luminescence decay of Eu3+ ion doped Lu2O3 film
  • Method for improving luminescence decay of Eu3+ ion doped Lu2O3 film

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Embodiment 1

[0021] Eu by sol-gel method combined with spin-coating process 3+ / Pr 3+ co-doped Lu 2 o 3 film. Use LuCl 3 ·6H 2 O as a precursor. 5g LuCl 3 ·6H 2 O powder was added into 50ml of absolute ethanol, and stirred at 100°C for 2h to completely dissolve the powder to obtain a transparent solution. Thereafter, 2 g of polyethylene glycol (molecular weight 6000), 6 g of citric acid and 6 ml of water were added and stirred at room temperature for 2 h to obtain a transparent sol. According to the concentration requirement, add 0.7ml Eu(NO 3 ) 3 solution (0.916mol / L) and the desired co-doped amount of Pr(NO 3 ) 3 Solution to sol, co-doped with Pr 3+ Concentrations are 0.1mol%, 0.3mol%, 0.5mol% Pr 3+ , the desired precursor sol can be obtained after stirring for about half an hour.

[0022] Si single wafers used to grow thin films need to be immersed in a mixture of concentrated sulfuric acid and concentrated phosphoric acid (volume ratio 3:1), rinsed with hydrofluoric acid...

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Abstract

The invention relates to a method for accelerating the luminescence decay of a Eu3+ ion doped Lu2O3 film, belonging to the technical field of luminescent film materials. The method adopts a Pechini sol-gel method, and comprises the following steps: adding LuCl3.6H2O powder into absolute ethanol; adding polyethylene glycol, citric acid and little water into the solution, and stirring the solution to prepare transparent sol; adding Eu(NO3)3 solution and co-doped Pr(NO3)3 solution into the sol, and stirring the sol to prepare precursor sol; uniformly coating the precursor sol on a monocrystal silicon substrate by a spin coater, and performing heat treatment on the monocrystal silicon substrate by a hot plate; and calcining the spun silicon substrate after repeated spinning and heat treatment to prepare the co-doped Lu2O3 film. The invention accelerates the luminescence decay of the film, and reduces the persistence of the film by a method of co-doping Pr3+ in Lu2O3: 5mol percent Eu film. Through component ratio optimization, the acquisition of 0.1 mol percent co-doped Pr3+ in the Lu2O3:5mol percent Eu film is a better choice, so that excellent foundation can be laid for application of system scintillation films.

Description

technical field [0001] The invention relates to an improved Eu 3+ Ion-doped Lu 2 O 3 The invention discloses a method for the luminescence attenuation characteristics of a luminescent thin film, belonging to the technical field of luminescent thin film materials. Background technique [0002] Lu 2 O 3 It is a new type of scintillator matrix material, which has a cubic ferromanganese structure, cubic crystal phase, belongs to the Ia3 space group, and has stable physical and chemical properties. Lu 2 O 3 Has a very high density (~9.4g / cm 3 ) has a very high atomic number Z (71), which makes its ability to stop ionizing radiation unusually high, and the energy band gap between the valence band and the conduction band is very wide (6.5ev), which can accommodate many activator ions such as Eu, Tb , Tm, Dy, Er, etc. emission levels. Based on these advantages, in recent years, Lu 2 O 3 Scintillation and lasing materials for substrates have aroused extensive research inte...

Claims

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Application Information

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IPC IPC(8): C09K11/78
Inventor 施鹰谢杰谢建军邱华军王剑
Owner SHANGHAI UNIV
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