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Chalcogenide film and method for producing the same

A technology of chalcogenide and manufacturing method, applied in static memory, instruments, electrical components, etc., to achieve the effects of excellent electrical characteristics, reduced resistance, and increased contact area

Active Publication Date: 2013-03-06
ULVAC INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0011] The present invention was conceived to solve the above problems, and an object of the present invention is to provide a chalcogenide film in which defects such as voids and cracks are less likely to be generated inside, and a method for producing the same

Method used

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  • Chalcogenide film and method for producing the same
  • Chalcogenide film and method for producing the same
  • Chalcogenide film and method for producing the same

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no. 1 approach

[0051] figure 1 It is a cross-sectional view showing a semiconductor device including the chalcogenide film according to the first embodiment of the present invention. This semiconductor device 10 is suitable as a resistance variable nonvolatile memory, and includes a contact hole 13 formed in an insulating film 12 on a substrate 11 and a chalcogenide film 14 formed in the contact hole 13 . Further, in this semiconductor device 10 , a lower electrode 15 with one end exposed at the bottom 13 a of the contact hole 13 and in contact with the chalcogenide film 14 , and an upper electrode 16 formed on the upper surface of the chalcogenide film 14 are formed.

[0052] As the substrate 11, a silicon wafer etc. are mentioned, for example. As the insulating film 12 , for example, a silicon oxide film or a silicon nitride obtained by oxidizing the surface of a silicon wafer can be mentioned.

[0053] The chalcogenide film 14 is composed of a base film 14a formed with a predetermined thi...

no. 2 approach

[0072] figure 2 It is a cross-sectional view showing a semiconductor device including the chalcogenide film according to the second embodiment of the present invention. In this second embodiment, the same reference numerals are assigned to the same configurations as those in the above-mentioned first embodiment, and detailed description thereof will be omitted.

[0073] In the second embodiment, the semiconductor device 20 is formed into a chalcogenide film 24 in the contact hole 13, which is formed with a predetermined thickness along the inside of the contact hole 13 including at least the bottom 13a of the contact hole 13. film 24a, and a crystal layer 24b which is on the base film 24a and buries the contact hole 13.

[0074] The base film 24a is formed of a metal oxide, particularly preferably selected from Ta 2 o 5 、TiO 2 、Al 2 o 3 and V 2 o 5 One or two or more of the constituent groups are formed. The metal oxide constituting the base film 24a is more preferab...

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Abstract

A chalcogenide film of the present invention is deposited, by sputtering, in a contact hole formed in an insulating layer on a substrate. The chalcogenide film comprises: an underlayer film formed at least on a bottom portion of the contact hole: and a crystal layer made of a chalcogen compound, and formed onto the underlayer film and in the contact hole.

Description

technical field [0001] The present invention relates to a chalcogenide film and its manufacturing method. More specifically, it relates to a chalcogenide suitable for recording layers of high-integration memories capable of non-volatile operation such as phase change memories, and chalcogenides that are less prone to defects such as voids and cracks inside. Membranes and methods of making them. [0002] This application claims priority based on Japanese Patent Application No. 2007-258563 for which it applied in Japan on October 2, 2007, and takes in the content here. Background technique [0003] In recent years, there is an increasing demand for processing a large amount of information such as image data in portable devices such as portable telephones and portable information terminals. Therefore, the demand for high-speed, low-power consumption, large-capacity, and small-sized non-volatile memories is also increasing for memory elements mounted in these portable devices. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00H01L27/105H10B69/00
CPCH01L45/141H01L45/06H01L45/1683H01L45/1625H01L45/1233H10N70/882H10N70/231H10N70/026H10N70/066H10N70/826G11C13/0004
Inventor 菊地真西冈浩木村勋神保武人邹弘纲
Owner ULVAC INC