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Slurry composition for chemical mechanical polishing of metal and polishing method using the same

一种化学机械、组合物的技术，应用在平坦化集成电路基板上的金属层,制造集成电路器件的组合物领域，能够解决金属电路临界尺寸变化等问题

Active Publication Date: 2010-09-01
CHEIL IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Dishing is an undesirable phenomenon because it causes changes in the critical dimensions of metal circuits

Method used

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  • Slurry composition for chemical mechanical polishing of metal and polishing method using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 5 to 7

[0099] Embodiments 5 to 7 (the impact of the copolymerization ratio of monomers on non-preston behavior)

[0100] All polymers were purchased from Polyscience (Pennsylvania, USA) and Sigma-Aldrich (Korea). As determined by the same method as described in Examples 1 to 4, the polymer was found to have an average molecular weight of 750,000. 0.05% by weight of each polymer having the copolymerization ratio shown in Table 2 was added to the same kind of standard copper paste used in Examples 1 to 4 to prepare a paste composition. The pH of the composition was adjusted to 2.1 with nitric acid. 30% hydrogen peroxide was added to the composition until the final polishing slurry had a hydrogen peroxide content of 3% by weight. Immediately after the addition, polishing was performed using the same kind of copper wafer and polishing equipment as used in Examples 1 to 4. The copper wafer was polished by the same procedure as described in Examples 1 to 4 except that the polishing down...

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Abstract

Provided is a slurry composition for chemical mechanical polishing (CMP) of a metal. The slurry composition comprises a copolymer whose average molecular weight is from about 600,000 to about 1,300,000 and whose monomers are acrylic acid and acrylamide in a molar ratio of about 1:30 to about 30: 1. The slurry composition exhibits a non-Prestonian behavior to achieve minimized dishing and attain a high degree of planarization.

Description

technical field [0001] The present invention relates to a composition for the manufacture of integrated circuit devices (integrated circuit devices) and a method of using the composition for the manufacture of integrated circuit devices. More specifically, the present invention relates to a method and composition for planarizing metal layers on integrated circuit substrates by chemical mechanical polishing (CMP). Background technique [0002] Typically, transistors of a semiconductor chip used in an electronic device are connected to each other via a pattern of interconnection trenches formed in a dielectric layer. The pattern configuration typically has a mosaic or dual damascene structure. A barrier layer overlies the patterned dielectric layer, and a metal layer overlies the barrier layer. The metal layer is at least of sufficient thickness to fill the patterned trenches with metal to form circuit interconnections. [0003] The interconnect trenches must be of sufficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K3/14
CPCC09G1/02C09K3/1463C23F3/06C09K3/1409H01L21/3212C09K3/14H01L21/304
Inventor 周霍摩金元来卢钟一李仁庆李泰永
Owner CHEIL IND INC