Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Making colloidal ternary nanocrystals

A technology of nanocrystals and colloidal solutions, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., which can solve the problems of unreported display of colloidal quantum dots and the inability of quantum dots to be widely used

Inactive Publication Date: 2010-09-15
EASTMAN KODAK CO
View PDF3 Cites 20 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Previous methods of producing non-blinking dots are application-specific and not widely applicable among technical disciplines using quantum dots
While self-assembled quantum dots exhibit short radiative lifetimes, colloidal quantum dots exhibiting similar properties have not been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Making colloidal ternary nanocrystals
  • Making colloidal ternary nanocrystals
  • Making colloidal ternary nanocrystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment I-1

[0061] Ternary core / shell non-scintillation nanocrystal Cd of the present invention x Zn 1-x Preparation of Se / ZnSe:

[0062] All synthetic routes were performed using standard air-free procedures using a dry box and Schlenk line. The first step in generating ternary cores is the formation of CdSe cores. Typically, 0.0755 g TDPA (1-tetradecylphosphonic acid), 4 g pre-degassed TOPO (trioctylphosphine oxide), and 2.5 g HDA (hexadecylamine) were added in a three-necked flask. The mixture was degassed at 100°C for half an hour. A 1 M TOPSe stock solution was prepared by dissolving 0.01 mol of selenium in 10 ml of TOP (trioctylphosphine). 1 ml TOPSe was added to the flask and the mixture was heated to 300°C. Quickly inject cadmium stock solution (0.06g CdAc in 3ml TOP) under vigorous stirring 2 ) to nucleate the CdSe nanocrystals, after which the temperature was set at 260 °C for further growth. After 5-10 min, the heat was removed and the flask was allowed to cool to room t...

Embodiment I-2

[0066] Ternary core / shell non-scintillation nanocrystal Cd of the present invention x Zn 1-x Preparation of Se / ZnSeS:

[0067] All synthetic routes were carried out using standard air-free procedures with a dry box and Schleck operating line. The first step in generating ternary cores is the formation of CdSe cores. In a three-necked flask, 0.2 mmol CdO and 0.5 g stearic acid were heated to 180 °C until the mixture was clear. In the dry box, 3ml HDA and 6ml TOPO were added to the mixture. On the Schreck line, the mixture was heated to 310°C with vigorous stirring, whereupon 1 ml of 1M TOPSe was injected. The temperature was then lowered to 290-300° C. and stirred for a further 10 minutes.

[0068] Thereafter a ZnSe shell is formed on the CdSe core. After cooling the original solution of this nucleus back to room temperature, it heated again to 190 degreeC. 260 μl of 1 M diethylzinc in hexane, 260 μl of 1 MTOPSe, and 2 ml of TOP were added in a syringe. The contents of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core / shell nanocrystals; and annealing the core / shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition.

Description

technical field [0001] The invention relates to the preparation of a colloidal solution of ternary nanocrystals. Background technique [0002] Colloidal semiconductor nanocrystals or quantum dots have been the focus of much research. Colloidal quantum dots (hereinafter referred to as quantum dots or nanocrystals) are easier to mass-produce than self-assembled quantum dots. Since colloidal quantum dots can be dispersed in solvents, they can be used in biological applications. Moreover, the potential for low-cost deposition methods makes colloidal quantum dots attractive for light-emitting devices such as LEDs, as well as other electronic devices such as solar cells, lasers, and quantum computing (cryptography) devices. While colloidal quantum dots may have wider applicability than self-assembled quantum dots, colloidal quantum dots have several relatively deficient properties. For example, self-assembled quantum dots exhibit relatively short radiative lifetimes of about 1 ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C09K11/88C09K11/02
CPCC30B33/02C30B29/50C09K11/88C09K11/883C30B29/40C30B29/60C09K11/02C30B7/00C30B29/48
Inventor K·B·卡汗任小凡
Owner EASTMAN KODAK CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com