41 results about "Ternary semiconductors" patented technology

A TCAM (ternary content addressable memory) cell array is provided with a search input node into which one bit of search data is inputted, a plurality of data input nodes into which a bit corresponding to one bit of search data is inputted, and a plurality of memory cells arranged in rows and columns. Each of the plurality of memory cells further includes a first cell storing one bit of said storage data, and a logical operation cell determining whether or not said search data and storage data match. A gate of a transistor forming each of a plurality of memory cells extends along the direction of said rows. Each of a plurality of wells in the region where the memory array is formed is formed so as to continue to a corresponding well of an adjacent memory cell in the direction of said columns.

The invention relates to a simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules, namely a preparation method of copper-indium-sulfur ternary semiconductor nano particles. The preparation method comprises the steps of: dissolving a copper salt and an indium salt in a certain amount of water, adding a proper amount of mercaptan acid, adjusting pH to a certain range, then adding a sulfur source, uniformly stirring, transferring the obtained solution into a hydrothermal reaction kettle, and carrying out hydrothermal reaction at a certain temperature; and cooling obtained colloidal solution to room temperature, and carrying out centrifugal settling to copper the copper-indium-sulfur semiconductor nano particles. The obtained copper-indium-sulfur semiconductor nano particles are divided into a chalcopyrite phase and a wurtzite phase, wherein the chalcopyrite granules are near-spherical and have granular size of 10-30 nm; and the wurtzite phase is of an irregular shape and a hexagonal laminated structure, and the size of the hexagonal laminated structure is 100-200 nm.

The invention relates to ternary semiconductor PbSnS3 nano crystal trithio tin lead and a physical preparation method thereof. The preparation method comprises the following steps: (1) washing a ball milling tank, drying, sealing a powder mixture of high-purity lead powder, tin powder and sulfur powder as raw materials inside the ball milling tank, and performing emptying treatment after the ball milling tank is sealed so as to prevent samples from being oxidized in reaction, wherein the particle size of the added powder is 100+ / -5nm; (2) mounting the ball milling tank on a ball mill for implementing ball milling, adjusting the rotation speed of the motor of the ball mill to be 1200r / minute, and implementing ball milling for more than 5 hours, thereby obtaining the ternary semiconductor nano crystal PbSnS3. The trithio tin lead nano crystal provided by the invention has the beneficial effects of being uniform in size, high in pure phase (no impurity) and good in crystallinity. In addition, compared with a chemical method which has the defects that harsh conditions (high temperature and high pressure) are needed, a reaction precursor is toxic and the like, the preparation method has remarkable advantages that the preparation process is simple, green and environment-friendly, large-scale production can be achieved, and the like.

The invention discloses a preparation method of a ternary semiconductor catalyst. The method specifically comprises the steps as follows: step 1, 1-3 mmol of benzoyl peroxide is added to a mixed solvent of 8-30 mL of acetone and 2-methoxyethanol, 0.2-0.5 mL of methacrylic acid and 0.4-1 mL of isopropyl titanate are sequentially added to the mixed solution, and a light yellow solution is obtained;step 2, after bismuth nitrate pentahydrate is added to the solution obtained in the step 1, the obtained solution is heated at 120 DEG C for 60 min, and a precursor P0 is obtained; step 3, g-C3N4 obtained with a thermal polymerization method is mixed with the P0 in the mass ratio smaller than 2, the obtained mixture is heated at 540 DEG C for 2 h in a tubular furnace where N2-O2 mixed gas is intermittently introduced, and the ternary catalyst is obtained. A heterostructure is constructed to avoid composition of photon-generated carriers, so that the photocatalytic performance of semiconductorsis improved to a certain extent.