41 results about "Ternary semiconductors" patented technology

A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core / shell nanocrystals; and annealing the core / shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition.

An optoelectronic device including two spaced apart electrodes; and at least one layer containing ternary core / shell nanocrystals disposed between the spaced electrodes and having ternary semiconductor cores containing a gradient in alloy composition and wherein the ternary core / shell nanocrystals exhibit single molecule non-blinking behavior characterized by on times greater than one minute or radiative lifetimes less than 10 ns.

A method of making a colloidal solution of ternary semiconductor nanocrystals, includes providing binary semiconductor cores; forming first shells on the binary semiconductor cores containing one of the components of the binary semiconductor cores and another component which when combined with the binary semiconductor will form a ternary semiconductor, thereby providing core / shell nanocrystals; and annealing the core / shell nanocrystals to form ternary semiconductor nanocrystals containing a gradient in alloy composition.

A TCAM (ternary content addressable memory) cell array is provided with a search input node into which one bit of search data is inputted, a plurality of data input nodes into which a bit corresponding to one bit of search data is inputted, and a plurality of memory cells arranged in rows and columns. Each of the plurality of memory cells further includes a first cell storing one bit of said storage data, and a logical operation cell determining whether or not said search data and storage data match. A gate of a transistor forming each of a plurality of memory cells extends along the direction of said rows. Each of a plurality of wells in the region where the memory array is formed is formed so as to continue to a corresponding well of an adjacent memory cell in the direction of said columns.

The invention discloses a Fe-Si-Al ternary amorphous thin film with adjustable band gap width and a preparation method of the thin film, belonging to the technical field of semiconductor materials. The thin film comprises the following formula: Fe(1-x-y)SixAly, wherein x is not lower than 50at.% and not higher than 70at.%; y is not lower than 1at.% and not higher than 11at.%; when the total amount of (x+y) is changed to 75at.% from 60at.%, the band gap width of the thin film can be adjusted to 0.65eV from 0.45eV; and the structure of the thin film is an amorphous structure. The film has the following advantages that (1), the Fe(1-x-y)SixAly thin film is a ternary amorphous thin film with adjustable band gap width from 0.45 eV to 0.65eV; Al not only affects the band gap width, but also increases the amorphous forming ability by increasing a component element film; (2), the total amount of (Si+Al) in the film can be conveniently adjusted by changing the quantity of Fe4Alz alloy sheets and the z value in a combined sputtering target to obtain different band gap widths; (3), the thin film is kept amorphous, so that the uniformity of the components and performances can be ensured, and the problems such as lattice mismatch, and multi-phase mixing and the like in the amorphous thin film preparation are effectively avoided. The Fe-Si-Al ternary amorphous thin film with adjustable band gap width provided by the invention is suitable for manufacturing narrow band-gap semiconductor apparatuses such as an infrared detector.

The invention relates to a simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules, namely a preparation method of copper-indium-sulfur ternary semiconductor nano particles. The preparation method comprises the steps of: dissolving a copper salt and an indium salt in a certain amount of water, adding a proper amount of mercaptan acid, adjusting pH to a certain range, then adding a sulfur source, uniformly stirring, transferring the obtained solution into a hydrothermal reaction kettle, and carrying out hydrothermal reaction at a certain temperature; and cooling obtained colloidal solution to room temperature, and carrying out centrifugal settling to copper the copper-indium-sulfur semiconductor nano particles. The obtained copper-indium-sulfur semiconductor nano particles are divided into a chalcopyrite phase and a wurtzite phase, wherein the chalcopyrite granules are near-spherical and have granular size of 10-30 nm; and the wurtzite phase is of an irregular shape and a hexagonal laminated structure, and the size of the hexagonal laminated structure is 100-200 nm.

The invention is applicable to the technical field of glass, and provides a photochromic powder, a photochromic film, a photochromic glass and a preparation method thereof. The photochromic powder includes tungsten oxide, oxalic acid, titanium oxide and zinc oxide. The photochromic powder provided by the invention employs titanium oxide, zinc oxide and tungsten oxide to form a trinary semiconductor; through the interband synergistic effect, the trinary semiconductor is more vulnerable to sun light excitation for generation of electron-hole pairs, so as to greatly improve discolouration performance.

The invention discloses a ternary semiconductor laminated composite photoelectrode, and a preparation method and an application thereof. The photoelectrode has an effective substance with a chemical formula of TiO2 / ZnO / BiOCl. The preparation method for the photoelectrode comprises the following steps: preparing TiO2 nanowires on FTO through a hydrothermal method so as to obtain a sample substrate1, then preparing a ZnO seed crystal layer on the sample substrate 1 through a sol-gel method, preparing the ZnO seed crystal layer coated sample substrate 1 into a sample substrate 2 covered with a ZnO nanowire array through a hydrothermal method, successively subjecting the sample substrate 2 to cyclic soaking in a Bi(NO3)3 solution, distilled water, a KCl solution and distilled water, then carrying out calcination, annealing and washing so as to obtain the ternary semiconductor laminated composite photoelectrode. Compared with a single TiO2 sample, the TiO2 / ZnO / BiOCl composite photoelectrode provided by the invention has the following advantages: photocurrent intensity is significantly improved; an electron hole recombination rate is reduced; photoelectric performance is significantly reinforced; a photocatalytic reaction is successfully expanded from an ultraviolet light region to a visible light region; the utilization efficiency of solar energy is improved; and the TiO2 / ZnO / BiOClcomposite photoelectrode can be used for photoelectrochemical photolysis of water to produce hydrogen.

The invention discloses a ternary semiconductor laminated composite photoelectrode, and a preparation method and an application thereof. The photoelectrode has an effective substance with a chemical formula of TiO2 / ZnO / BiOCl. The preparation method for the photoelectrode comprises the following steps: preparing TiO2 nanowires on FTO through a hydrothermal method so as to obtain a sample substrate1, then preparing a ZnO seed crystal layer on the sample substrate 1 through a sol-gel method, preparing the ZnO seed crystal layer coated sample substrate 1 into a sample substrate 2 covered with a ZnO nanowire array through a hydrothermal method, successively subjecting the sample substrate 2 to cyclic soaking in a Bi(NO3)3 solution, distilled water, a KCl solution and distilled water, then carrying out calcination, annealing and washing so as to obtain the ternary semiconductor laminated composite photoelectrode. Compared with a single TiO2 sample, the TiO2 / ZnO / BiOCl composite photoelectrode provided by the invention has the following advantages: photocurrent intensity is significantly improved; an electron hole recombination rate is reduced; photoelectric performance is significantly reinforced; a photocatalytic reaction is successfully expanded from an ultraviolet light region to a visible light region; the utilization efficiency of solar energy is improved; and the TiO2 / ZnO / BiOClcomposite photoelectrode can be used for photoelectrochemical photolysis of water to produce hydrogen.

The invention relates to ternary semiconductor PbSnS3 nano crystal trithio tin lead and a physical preparation method thereof. The preparation method comprises the following steps: (1) washing a ball milling tank, drying, sealing a powder mixture of high-purity lead powder, tin powder and sulfur powder as raw materials inside the ball milling tank, and performing emptying treatment after the ball milling tank is sealed so as to prevent samples from being oxidized in reaction, wherein the particle size of the added powder is 100+ / -5nm; (2) mounting the ball milling tank on a ball mill for implementing ball milling, adjusting the rotation speed of the motor of the ball mill to be 1200r / minute, and implementing ball milling for more than 5 hours, thereby obtaining the ternary semiconductor nano crystal PbSnS3. The trithio tin lead nano crystal provided by the invention has the beneficial effects of being uniform in size, high in pure phase (no impurity) and good in crystallinity. In addition, compared with a chemical method which has the defects that harsh conditions (high temperature and high pressure) are needed, a reaction precursor is toxic and the like, the preparation method has remarkable advantages that the preparation process is simple, green and environment-friendly, large-scale production can be achieved, and the like.

A Y-doped pseudo-ternary semiconductor refrigeration material and a preparation method thereof, relating to a semiconductor refrigeration material and a preparation method thereof. The purpose is to solve the existing Bi 2 Te 3 The semiconductor-based cooling material is prone to splitting during the cutting process. The molecular formula of the Y-doped pseudo-ternary semiconductor refrigeration material is: (Bi 2 Te 3 ) (1‑2x) (Sb 2 Te 3 ) x (Bi 2 Se 3 ) x ‑Y, x in the molecular formula is 0.04~0.06. Preparation: Weigh yttrium powder, tellurium powder, bismuth powder, antimony powder and selenium powder as raw materials; the raw materials are mechanically alloyed, the sample is sintered in vacuum at high temperature, and finally hot-pressed. The mechanical properties of the Y-doped pseudo-ternary semiconductor refrigeration material prepared by the invention are greatly improved, and the problem of easy splitting is solved. The Y-doped concentration is 1% and the ZT value of the material at 300K when the Y-doped concentration is 1% and is hot-pressed at 200°C 0.73. The invention is suitable for preparing semiconductor refrigeration materials.

The invention discloses a Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and a preparation method thereof, and belongs to the technical field of semiconductor materials. The Fe-Cr-Si ternary amorphous thin film has the following general formula: Fe3Cr1Six, wherein x is 8-18; along with increase of x from 8 to 18, the band gap width increases from 0 eV to 0.65 eV; and the thin film structure is amorphous. Compared with an ordinary binary transition metal silicide thin film, the Fe-Cr-Si ternary amorphous thin film has the advantages as follows: 1, the Fe3Cr1Six thin film is a novel ternary semiconductor amorphous thin film and can modulate the band gap width within a relatively large range of 0-0.65 eV; and under the action of Cr, the band gap width can be affected and the amorphous forming capability of the thin film can be increased through addition of one element; 2, the proportion of Si in the Fe3Cr1Six thin film can be conveniently regulated only by changing the number of Fe3Cr1 alloys in a combined sputtering target, thus obtaining different band gap widths; and 3, the Fe3Cr1Six thin film is amorphous, so that the uniformity of components and the performance can be ensured, and lattice mismatch and multiphase mixing and other problems during preparation of a crystalline thin film are effectively avoided. Therefore, the Fe-Cr-Si ternary amorphous thin film is applicable to production of near infrared detectors and other semiconductor devices with narrow band gaps.

The invention discloses a preparation method of a ternary semiconductor catalyst. The method specifically comprises the steps as follows: step 1, 1-3 mmol of benzoyl peroxide is added to a mixed solvent of 8-30 mL of acetone and 2-methoxyethanol, 0.2-0.5 mL of methacrylic acid and 0.4-1 mL of isopropyl titanate are sequentially added to the mixed solution, and a light yellow solution is obtained;step 2, after bismuth nitrate pentahydrate is added to the solution obtained in the step 1, the obtained solution is heated at 120 DEG C for 60 min, and a precursor P0 is obtained; step 3, g-C3N4 obtained with a thermal polymerization method is mixed with the P0 in the mass ratio smaller than 2, the obtained mixture is heated at 540 DEG C for 2 h in a tubular furnace where N2-O2 mixed gas is intermittently introduced, and the ternary catalyst is obtained. A heterostructure is constructed to avoid composition of photon-generated carriers, so that the photocatalytic performance of semiconductorsis improved to a certain extent.