Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and preparation method thereof

A fe-cr-si, amorphous thin film technology, applied in the field of Fe-Cr-Si ternary amorphous thin film and its preparation, can solve the problem of multiphase hybrid deterioration, prone to stacking fault, twinning, large film base loss. Matching and other problems, to achieve the effect that the process conditions are easy to control, the application prospect is broad, and the industrialization is convenient.
CN103074553BInactive Publication Date: 2014-12-10DALIAN UNIV OF TECH
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Patents(China)
Current Assignee / Owner
DALIAN UNIV OF TECH
Publication Date
2014-12-10
Estimated Expiration
Not applicable · inactive patent

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Abstract

The invention discloses a Fe-Cr-Si ternary amorphous thin film capable of modulating band gap width and a preparation method thereof, and belongs to the technical field of semiconductor materials. The Fe-Cr-Si ternary amorphous thin film has the following general formula: Fe3Cr1Six, wherein x is 8-18; along with increase of x from 8 to 18, the band gap width increases from 0 eV to 0.65 eV; and the thin film structure is amorphous. Compared with an ordinary binary transition metal silicide thin film, the Fe-Cr-Si ternary amorphous thin film has the advantages as follows: 1, the Fe3Cr1Six thin film is a novel ternary semiconductor amorphous thin film and can modulate the band gap width within a relatively large range of 0-0.65 eV; and under the action of Cr, the band gap width can be affected and the amorphous forming capability of the thin film can be increased through addition of one element; 2, the proportion of Si in the Fe3Cr1Six thin film can be conveniently regulated only by changing the number of Fe3Cr1 alloys in a combined sputtering target, thus obtaining different band gap widths; and 3, the Fe3Cr1Six thin film is amorphous, so that the uniformity of components and the performance can be ensured, and lattice mismatch and multiphase mixing and other problems during preparation of a crystalline thin film are effectively avoided. Therefore, the Fe-Cr-Si ternary amorphous thin film is applicable to production of near infrared detectors and other semiconductor devices with narrow band gaps.
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Description

technical field

[0001] The invention relates to a Fe-Cr-Si ternary amorphous thin film capable of modulating the bandgap width and a preparation method thereof, belonging to the technical field of semiconductor materials. Background technique

[0002] Semiconductor metal silicides are one of the materials used in solar cells. They have excellent compatibility with single crystal silicon technology, and have metal conductivity, high thermal stability, oxidation resistance and superior mechanical stability. At the same time, semiconductor Silicides have also won widespread attention due to their superior environmental friendliness, especially transition metal silicides. The typical one is β-FeSi 2 and CrSi 2 . β-FeSi 2 It has a direct band gap of 0.83~0.87eV, and has a large optical absorption coefficient for infrared wavelengths (α>10 -5 cm -1 ,1.0eV), the theoretical photoelectric conversion efficiency can reach 16~23%, which can be used to prepare high-efficiency s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
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