Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Ternary semiconductor laminated composite photoelectrode, and preparation method and application thereof

A technology of semiconductor and recombination of light, which is applied in the field of photoelectrochemistry, can solve the problems of photogenerated charge recombination, low electron mobility, poor separation effect of electrons and holes, etc., and achieve the effect of improving utilization efficiency and reducing electron-hole recombination rate

Inactive Publication Date: 2019-07-16
NORTHWEST NORMAL UNIVERSITY
View PDF3 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In view of the deficiencies pointed out in the above background technology, the present invention provides a ternary semiconductor laminated composite photoelectrode and its preparation method and application, aiming to solve the problem of existing single TiO in the above background technology. 2 The mobility of electrons generated by semiconductor materials after absorbing light is low, and the separation effect of electrons and holes is poor, which easily leads to problems such as recombination of photogenerated charges and short photoresponse range.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ternary semiconductor laminated composite photoelectrode, and preparation method and application thereof
  • Ternary semiconductor laminated composite photoelectrode, and preparation method and application thereof
  • Ternary semiconductor laminated composite photoelectrode, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] A ternary semiconductor stacked composite photoelectrode, the chemical formula of the photoelectrode effective material is TiO 2 / ZnO / BiOCl.

[0029] The preparation method of the above-mentioned ternary semiconductor laminated composite photoelectrode is as follows:

[0030] (1) FTO (conductive glass) pretreatment

[0031] Cut the FTO into small pieces with a size of about 1.5×1cm, then put the FTO into a beaker, wash it ultrasonically with washing powder, deionized water, isopropanol, acetone, and distilled water for about 15 minutes, and then dry it with nitrogen for later use.

[0032] (2) Preparation of TiO-coated 2 FTO

[0033] Measure 15mL of ultrapure water in a graduated cylinder, put it in a 50mL beaker, slowly add 15mL of concentrated hydrochloric acid during stirring, and after stirring for 5 minutes, add 500μL of tetrabutyl titanate solution to it with a pipette gun , and then continue stirring at room temperature until the mixed solution in the beaker ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a ternary semiconductor laminated composite photoelectrode, and a preparation method and an application thereof. The photoelectrode has an effective substance with a chemical formula of TiO2 / ZnO / BiOCl. The preparation method for the photoelectrode comprises the following steps: preparing TiO2 nanowires on FTO through a hydrothermal method so as to obtain a sample substrate1, then preparing a ZnO seed crystal layer on the sample substrate 1 through a sol-gel method, preparing the ZnO seed crystal layer coated sample substrate 1 into a sample substrate 2 covered with a ZnO nanowire array through a hydrothermal method, successively subjecting the sample substrate 2 to cyclic soaking in a Bi(NO3)3 solution, distilled water, a KCl solution and distilled water, then carrying out calcination, annealing and washing so as to obtain the ternary semiconductor laminated composite photoelectrode. Compared with a single TiO2 sample, the TiO2 / ZnO / BiOCl composite photoelectrode provided by the invention has the following advantages: photocurrent intensity is significantly improved; an electron hole recombination rate is reduced; photoelectric performance is significantly reinforced; a photocatalytic reaction is successfully expanded from an ultraviolet light region to a visible light region; the utilization efficiency of solar energy is improved; and the TiO2 / ZnO / BiOClcomposite photoelectrode can be used for photoelectrochemical photolysis of water to produce hydrogen.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemistry, and in particular relates to a ternary semiconductor laminated composite photoelectrode and its preparation method and application. Background technique [0002] Photoelectrochemical water splitting to produce hydrogen is considered to be an important technology to solve the future global energy crisis, and it has gradually become a research hotspot in the field of new energy. The essential element of photoelectrochemical water splitting technology is the semiconductor photoelectrode, and the conversion efficiency and stability of the semiconductor photoelectrode are the key points that affect the effect of the entire system. Therefore, how to obtain a semiconductor photoelectrode with excellent performance is an important research topic in this field. n-type TiO was first reported by Honda and Fujishima et al. in 1972 2 Since the photoelectrode and its application to photoelectro...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C25B1/04C25B11/06
CPCC25B1/04C25B1/55C25B11/051C25B11/091Y02E60/36Y02P20/133
Inventor 郭惠霞苏策于冬梅李亮亮
Owner NORTHWEST NORMAL UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com