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Simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules

A nanoparticle, copper indium sulfur technology, applied in nanotechnology, chemical instruments and methods, gallium/indium/thallium compounds, etc., can solve the problem of inability to control CuInS2 crystal phase and particle size, complex preparation steps, toxic organic solvents, etc. problem, to achieve the effect of low cost, simple preparation process, and avoid the use of toxic organic solvents

Active Publication Date: 2014-12-24
INST OF PROCESS ENG CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] The current preparation method mainly has the following defects: (1) involves toxic organic solvents, especially at high temperatures; (2) the preparation steps are complicated; (3) the CuInS cannot be controlled 2 Generally, only one phase of the product can be obtained

Method used

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  • Simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules
  • Simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules
  • Simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules

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Effect test

Embodiment 1

[0047] Embodiment 1 prepares the CuInS of chalcopyrite phase 2 nanoparticles

[0048] Dissolve copper nitrate and indium chloride in water with a molar ratio of 1:1, add an appropriate amount of thioglycolic acid to adjust the pH, and then add sodium sulfide, wherein the molar ratio of sodium sulfide to copper sulfate is 2:1. After stirring for a certain period of time, the resulting solution was placed in a reaction kettle and reacted at 160° C. for 20 h. The reactor was naturally cooled to room temperature, centrifugally settled, and then washed repeatedly with deionized water and ethanol, and the obtained nanoparticles were dried at 70°C for 4 hours to obtain a black powder. The X-ray diffraction characterization of the obtained powder sample shows that the obtained copper indium sulfur nanoparticles are chalcopyrite phase, figure 1 Shown is its X-ray diffraction pattern. High-definition transmission electron microscopy and electron diffraction spots further verified tha...

Embodiment 2

[0049] Embodiment 2 prepares the CuInS of wurtzite phase 2 nanoparticles

[0050] Dissolve copper sulfate and indium chloride in water at a molar ratio of 1:1, add an appropriate amount of thioglycolic acid, stir for 5 minutes, then add thiourea to adjust the pH, wherein the molar ratio of thiourea to copper sulfate is 2:1. After stirring for a certain period of time, the obtained solution was placed in a reaction kettle and reacted at 140° C. for 15 hours. The reactor was naturally cooled to room temperature, centrifugally settled, and then washed repeatedly with deionized water and ethanol, and the obtained nanoparticles were dried at 70°C for 4 hours to obtain a black powder. The X-ray diffraction characterization of the obtained powder sample shows that the obtained copper indium sulfur nanoparticles are wurtzite phase, image 3 Shown is its X-ray diffraction pattern.

Embodiment 3

[0051] Embodiment 3 prepares the CuInS of wurtzite 2 nanoparticles

[0052] Dissolve copper sulfate and indium chloride in water at a molar ratio of 1:1, add 50ml of mercaptoacetic acid, stir for 5 minutes, then add thiourea to adjust the pH, wherein the molar ratio of thiourea to copper sulfate is 2:1. After stirring for a certain period of time, the resulting solution was placed in a reactor and reacted at 200° C. for 2 hours. The reactor was naturally cooled to room temperature, centrifugally settled, and then washed repeatedly with deionized water and ethanol, and the obtained nanoparticles were dried at 70°C for 4 hours to obtain a black powder.

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Abstract

The invention relates to a simple and controllable preparation method of copper-indium-sulfur ternary semiconductor nano granules, namely a preparation method of copper-indium-sulfur ternary semiconductor nano particles. The preparation method comprises the steps of: dissolving a copper salt and an indium salt in a certain amount of water, adding a proper amount of mercaptan acid, adjusting pH to a certain range, then adding a sulfur source, uniformly stirring, transferring the obtained solution into a hydrothermal reaction kettle, and carrying out hydrothermal reaction at a certain temperature; and cooling obtained colloidal solution to room temperature, and carrying out centrifugal settling to copper the copper-indium-sulfur semiconductor nano particles. The obtained copper-indium-sulfur semiconductor nano particles are divided into a chalcopyrite phase and a wurtzite phase, wherein the chalcopyrite granules are near-spherical and have granular size of 10-30 nm; and the wurtzite phase is of an irregular shape and a hexagonal laminated structure, and the size of the hexagonal laminated structure is 100-200 nm.

Description

technical field [0001] The invention relates to a preparation method of semiconductor nanoparticles, in particular to a simple and controllable preparation method of copper indium sulfur ternary semiconductor nanoparticles. Background technique [0002] As the energy problem becomes increasingly urgent, solar cells, as a renewable clean energy source, have attracted worldwide attention. Applying nanomaterials and technologies to solar cells may greatly increase the conversion rate of existing solar cells, reduce the cost of solar energy production, break through the efficiency bottleneck of existing solar cells, and promote the development of new solar cells. Currently, developing nanomaterials that can be used in solar cells has become a new challenge. [0003] Solar cells are mainly divided into two categories: crystalline silicon solar cells and thin film solar cells. Among them, thin-film solar cells have attracted widespread attention because they can be printed on fl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01G15/00B82Y40/00
Inventor 陈运法焦柯嘉武晓峰
Owner INST OF PROCESS ENG CHINESE ACAD OF SCI
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