ternary semiconductor pbsns 3 Nanocrystal and preparation method thereof

A semiconductor and nanocrystal technology, applied in nanotechnology, nanotechnology, chemical instruments and methods, etc., can solve the problems of unfriendly environment, low nanocrystal yield, unfavorable large-scale production, etc., achieve good optoelectronic performance and simple preparation process , to achieve the effect of mass production

Inactive Publication Date: 2020-11-17
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

Usually PbSnS 3 The preparation methods of PbSnS include direct element mixing and heat treatment, both of which need to be carried out in a vacuum-sealed quartz bottle, and the reaction temperature needs to exceed 600 ° C, and the chemical method reported in the literature is PbSnS 3 Nanorods and thin films, but the characteristics of nanocrystals can only be fully reflected when their size and shape have good monodispersity. Therefore, in order to make nanomaterials enter the application field, the preparation process of nanomaterials must be solved first. To obtain stable and reliable nanomaterials with size, shape, dimension and monodispersity
In the preparation of metal sulfide nanocrystals, there are chemical deposition methods, sonochemical methods, hydrothermal synthesis methods and microwave radiation methods, but these methods often require organic solvents, high temperature and radiation, and the cost is high. And the precursors used in the experiment are highly toxic and unfriendly to the environment, and the output of nanocrystals is very small, which is not conducive to large-scale production. Most of them are only suitable for simple scientific research work in laboratories, which makes semiconductor nanocrystals Further promotion in the field of application is severely limited

Method used

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  • ternary semiconductor pbsns  <sub>3</sub> Nanocrystal and preparation method thereof
  • ternary semiconductor pbsns  <sub>3</sub> Nanocrystal and preparation method thereof
  • ternary semiconductor pbsns  <sub>3</sub> Nanocrystal and preparation method thereof

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Embodiment 1

[0023] Weigh 7.9671g, 4.5646g and 2.4684g of elemental Pb, Sn and S powder respectively (the purity is above 99.9wt%), the weighing error is ±0.0002g, put the weighed sample in the ball mill jar and seal it , A ball mill with a diameter ranging from 2-12mm has been added in advance before the sample is placed, and the mass ratio of the ball mill to the powder mixture is set at 10:1-15:1. Put it in the glove box (full of inert gas), open it and let it stand to remove the air in the jar, seal the jar after 2 hours, take it out and install it on a SPEX8000 ball mill for ball milling, respectively at 1h, 5h, 10h, 20h and 40 hours Take a small amount of powder (the sampling process should be carried out in a glove box to avoid side reactions from entering the tank), and then perform XRD tests on samples of different time periods, and the XRD patterns are as follows: figure 1 and figure 2 shown. Then the resulting semiconductor nanocrystals were coated with alcohol and organic ma...

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Abstract

The invention relates to ternary semiconductor PbSnS3 nano crystal trithio tin lead and a physical preparation method thereof. The preparation method comprises the following steps: (1) washing a ball milling tank, drying, sealing a powder mixture of high-purity lead powder, tin powder and sulfur powder as raw materials inside the ball milling tank, and performing emptying treatment after the ball milling tank is sealed so as to prevent samples from being oxidized in reaction, wherein the particle size of the added powder is 100+ / -5nm; (2) mounting the ball milling tank on a ball mill for implementing ball milling, adjusting the rotation speed of the motor of the ball mill to be 1200r / minute, and implementing ball milling for more than 5 hours, thereby obtaining the ternary semiconductor nano crystal PbSnS3. The trithio tin lead nano crystal provided by the invention has the beneficial effects of being uniform in size, high in pure phase (no impurity) and good in crystallinity. In addition, compared with a chemical method which has the defects that harsh conditions (high temperature and high pressure) are needed, a reaction precursor is toxic and the like, the preparation method has remarkable advantages that the preparation process is simple, green and environment-friendly, large-scale production can be achieved, and the like.

Description

technical field [0001] The invention belongs to the field of preparation of nanomaterials, in particular to a ternary semiconductor nanocrystalline tin-lead trisulfide (PbSnS 3 ) and their physical preparation methods. Background technique [0002] The preparation of nanomaterials is one of the research hotspots in the field of materials science. Nanomaterials have attracted extensive attention from scientists due to their significant quantum size effect, surface effect and dielectric confinement effect, which can cause changes in the properties of materials such as mechanics, electricity, magnetism, heat, optics and chemical activity. [0003] PbS (with a bandgap of 0.37eV) and SnS 2 (Band gap about 2.2eV) are two typical binary S-group compounds, in which SnS 2 It is an N-type semiconductor with a wide bandgap, and has a high light absorption coefficient in the visible region (>10 4 cm -1 ) and strong photoconductive properties make it a suitable light-absorbing ma...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/46C30B28/02B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C30B28/02C30B29/46
Inventor 谭国龙方娟
Owner WUHAN UNIV OF TECH
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