A kind of y-doped pseudo-ternary semiconductor refrigeration material and its preparation method

A semiconductor and refrigeration technology, applied in the field of semiconductor refrigeration materials and their preparation, can solve problems such as splitting, and achieve the effects of improved mechanical properties, increased size, and dense materials

Active Publication Date: 2021-12-07
HARBIN NORMAL UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] In order to solve the existing Bi 2 Te 3 Based on the problem of splitting of base semiconductor refrigeration materials during the cutting process, a Y-doped pseudo-ternary semiconductor refrigeration material and its preparation method are proposed

Method used

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  • A kind of y-doped pseudo-ternary semiconductor refrigeration material and its preparation method
  • A kind of y-doped pseudo-ternary semiconductor refrigeration material and its preparation method
  • A kind of y-doped pseudo-ternary semiconductor refrigeration material and its preparation method

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specific Embodiment approach 1

[0045] Specific implementation mode one: the molecular formula of the Y-doped pseudo-ternary semiconductor refrigeration material in this implementation mode is: (Bi 2 Te 3 ) (1-2x) (Sb 2 Te 3 ) x (Bi 2 Se 3 ) x -Y, x in the molecular formula is 0.04-0.06; the mass fraction of Y in the Y-doped pseudo-ternary semiconductor refrigeration material is 1-6%.

[0046] Principle and beneficial effect of this embodiment:

[0047] 1. In this embodiment, Y doping is used to improve the carrier transport mechanism in the material. In this embodiment, the conductivity and thermal conductivity of the Y-doped pseudo-ternary semiconductor refrigeration material vary with the doping concentration when the doping concentration is less than 4%. The increase of impurity concentration first increases and then decreases; the Y doping concentration is 1%, and the thermoelectric figure of merit is 0.73 when hot-pressed at 200°C; the maximum Seebeck coefficient of the Y-doped pseudo-ternary s...

specific Embodiment approach 2

[0049] Specific embodiment two: the preparation method of present embodiment Y-doped pseudo-ternary semiconductor refrigeration material is carried out according to the following steps:

[0050] 1. Raw material weighing

[0051] According to the molecular formula: (Bi 2 Te 3 ) (1-2x) (Sb 2 Te 3 ) x (Bi 2 Se 3 ) x The stoichiometric ratio of tellurium powder, bismuth powder, antimony powder and selenium powder is weighed, and x is 0.04~0.06 in the molecular formula; Yttrium powder is weighed simultaneously, and mixed with tellurium powder, bismuth powder, antimony powder and selenium powder as raw material;

[0052] The mass fraction of yttrium powder in the raw material is 1% to 6%;

[0053] 2. Mechanical alloying

[0054] The raw materials are placed in a ball mill for mechanical alloying to obtain Y-doped pseudo-ternary mechanical alloyed powder materials;

[0055] 3. Vacuum high temperature sintering of samples

[0056] Dry the Y-doped pseudo-ternary mechanical ...

specific Embodiment approach 3

[0065] Embodiment 3: This embodiment is different from Embodiment 2 in that: the purity of the yttrium powder, tellurium powder, bismuth powder, antimony powder and selenium powder in step 1 is 99.99%. Other steps and parameters are the same as in the second embodiment.

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Abstract

A Y-doped pseudo-ternary semiconductor refrigeration material and a preparation method thereof, relating to a semiconductor refrigeration material and a preparation method thereof. The purpose is to solve the existing Bi 2 Te 3 The semiconductor-based cooling material is prone to splitting during the cutting process. The molecular formula of the Y-doped pseudo-ternary semiconductor refrigeration material is: (Bi 2 Te 3 ) (1‑2x) (Sb 2 Te 3 ) x (Bi 2 Se 3 ) x ‑Y, x in the molecular formula is 0.04~0.06. Preparation: Weigh yttrium powder, tellurium powder, bismuth powder, antimony powder and selenium powder as raw materials; the raw materials are mechanically alloyed, the sample is sintered in vacuum at high temperature, and finally hot-pressed. The mechanical properties of the Y-doped pseudo-ternary semiconductor refrigeration material prepared by the invention are greatly improved, and the problem of easy splitting is solved. The Y-doped concentration is 1% and the ZT value of the material at 300K when the Y-doped concentration is 1% and is hot-pressed at 200°C 0.73. The invention is suitable for preparing semiconductor refrigeration materials.

Description

technical field [0001] The invention relates to a semiconductor refrigeration material and a preparation method thereof. Background technique [0002] Thermoelectric materials have entered people's field of vision due to their small size, no noise, and zero emission of toxic substances. Thermoelectric materials, also known as semiconductor refrigeration materials, can realize the direct conversion of electrical energy and thermal energy in a solid state. When there is a temperature difference in the thermoelectric material, an electromotive force is generated, and then heat energy is converted into electrical energy. On the contrary, when there is a potential difference between the two ends of the material, it will also produce heat absorption or heat release. This technology is a thermoelectric conversion technology. Through electrical connection, thermoelectric materials can be used to manufacture thermoelectric power generation devices and semiconductor refrigeration de...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/14H01L35/16H01L35/18H01L35/34
CPCH10N10/851H10N10/852H10N10/853H10N10/01
Inventor 王月媛胡建民解晓颜牛丽陈婷婷
Owner HARBIN NORMAL UNIVERSITY
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