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Ternary semiconductor quantum dot/graphene functional composite material and preparation method thereof

A functional composite material and quantum dot technology, applied in the field of ternary semiconductor quantum dot/graphene functional composite material and its preparation, can solve the problems of affecting the stability of optoelectronic properties, narrow spectral response range, quantum dot agglomeration, etc. Large instantaneous photocurrent intensity, improved light absorption range and intensity, and good stability

Inactive Publication Date: 2015-04-01
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing research on the photoelectric properties of graphene mainly focuses on the fixed-component ZnS, CdS, CdSe, and CdTe quantum dots with adjustable load sizes, and the spectral response range is narrow.
Moreover, semiconductor quantum dots and graphene are mainly connected by weak non-covalent bonds such as π bond functionalization and ionic bond functionalization, so that the loaded semiconductor quantum dots are easily dissociated from the quantum dot / graphene composite system, and quantum dots appear. The phenomenon of dot agglomeration or stacking of graphene sheets affects the stability of its photoelectric performance

Method used

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  • Ternary semiconductor quantum dot/graphene functional composite material and preparation method thereof
  • Ternary semiconductor quantum dot/graphene functional composite material and preparation method thereof
  • Ternary semiconductor quantum dot/graphene functional composite material and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Preparation of ternary semiconductor quantum dots CdSe 0.5 Te 0.5 / graphene functional composite material, the steps are as follows:

[0038] Mix 10g flake graphite ore sample with the mixed acid solution of sulfuric acid and hydrofluoric acid at a solid-to-liquid mass ratio of 2.5:1, wherein the concentration of sulfuric acid is 45wt%, and the concentration of hydrofluoric acid is 20wt%, filter after reacting for 2h, and wash the filter residue with distilled water until The filtrate has a pH value of 7 and is dried to obtain high carbon graphite. Take 5g of the prepared high-carbon graphite and place it in a mixed solution consisting of 10mL of concentrated sulfuric acid and 5mL of concentrated nitric acid, stir and react for 2h, wash and dry to obtain acidified graphite. Take 5g of the acidified graphite prepared above, add it to 115mL of concentrated sulfuric acid, add 2.5g of sodium nitrate, and slowly add 15g of potassium permanganate, stir and react at a mediu...

Embodiment 2

[0042] Preparation of ternary semiconductor quantum dots CdS 0.5 Se 0.5 / graphene functional composite material, the steps are as follows:

[0043] The preparation process of the aqueous dispersion of GO is the same as in Example 1.

[0044] Dissolve 2.66g of cadmium acetate in 50mL of ethylene glycol to obtain a Cd-containing dispersion (0.2mol / L); take 1.140g of thiourea and 0.395g of selenium powder and place them in 10mL of ethylene glycol (S: 1.5mol / L). L, Se: 0.5mol / L), ultrasonically mixed uniformly to obtain a dispersion containing S and Se, adding the dispersion containing S and Se to the dispersion containing Cd, and mixing uniformly to obtain a precursor, the above precursor Transfer to a reaction kettle with a capacity of 100mL, and react at 120°C for 12h to obtain ternary semiconductor quantum dots CdS 0.5 Se 0.5 , 2 mg of the ternary semiconductor quantum dots CdS prepared above 0.5 Se 0.5 The functionalized DSPE-PEG amine was introduced to modify it to fo...

Embodiment 3

[0046] Preparation of ternary semiconductor quantum dots CdS 0.8 Se 0.2 / graphene functional composite material, the steps are as follows:

[0047] The preparation process of the aqueous dispersion of GO is the same as in Example 1.

[0048] Dissolve 2.66g of cadmium acetate in 50mL of ethylene glycol to obtain a Cd-containing dispersion (0.2mol / L); take 1.824g of thiourea and 0.158g of selenium powder in 10mL of ethylene glycol, and mix them uniformly by ultrasonic to obtain A dispersion containing Se and S (Se: 0.2mol / L, S: 2.4mol / L), adding the dispersion containing Se and S to the dispersion containing Cd, mixing uniformly to obtain a precursor, the above precursor The solid was transferred to a reaction kettle with a capacity of 100mL, and the reaction was stirred at 120°C for 12h to prepare ternary semiconductor quantum dots CdS 0.8 Se 0.2 . 2mg of the ternary semiconductor quantum dots CdS prepared above 0.8 Se 0.2 The functionalized DSPE-PEG amine was introduce...

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Abstract

The invention relates to a ternary semiconductor quantum dot / graphene functional composite material. The molecular formula of the ternary semiconductor quantum dot is CdSexTe<1-x>, CdSxSe<1-x> or ZnxCd<1-x>S, wherein x is more than or equal to 0.2 and less than or equal to 0.8, and a product is obtained by adopting the following steps: 1) preparing ternary semiconductor quantum dots; 2) performing surface function modification to the ternary semiconductor quantum dots; and 3) preparation of the ternary semiconductor quantum dot / graphene functional composite material: adding a cross-linking agent into a water dispersion solution for oxidizing graphene, then adding surface-functionally modified ternary semiconductor quantum dots, and reacting to obtain the ternary semiconductor quantum dot / oxidized graphene composite material, performing hydrazine hydrate reduction to obtain the ternary semiconductor quantum dot / graphene functional composite material. The functional composite material is wide in spectral response range, and the light absorption range of the graphene-based composite material can be effectively extended.

Description

technical field [0001] The invention relates to the technical field of preparation of graphene functional composite materials, in particular to a ternary semiconductor quantum dot / graphene functional composite material and a preparation method thereof. Background technique [0002] my country's graphite mineral resources are rich and of good quality, but the related graphite deep processing technology is relatively backward. It is imminent to increase research and development efforts and increase the added value of graphite products. Today, breakthroughs have been made in the research on graphite oxide, graphite oxide and graphene. Starting from cheap natural graphite, it is a research hotspot in the field of materials to manufacture low-cost and high-performance graphene functional materials. [0003] Graphene is the basic unit for constructing other dimensional carbonaceous materials, including zero-dimensional fullerenes, one-dimensional carbon nanotubes, and three-dimen...

Claims

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Application Information

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IPC IPC(8): C01B19/00C01B31/04
Inventor 雷芸徐骏陈菲菲何跃
Owner WUHAN UNIV OF TECH
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