Ternary semiconductor PbSnS3 nano crystal and preparation method thereof

Abstract

The invention relates to ternary semiconductor PbSnS3 nano crystal trithio tin lead and a physical preparation method thereof. The preparation method comprises the following steps: (1) washing a ball milling tank, drying, sealing a powder mixture of high-purity lead powder, tin powder and sulfur powder as raw materials inside the ball milling tank, and performing emptying treatment after the ball milling tank is sealed so as to prevent samples from being oxidized in reaction, wherein the particle size of the added powder is 100+/-5nm; (2) mounting the ball milling tank on a ball mill for implementing ball milling, adjusting the rotation speed of the motor of the ball mill to be 1200r/minute, and implementing ball milling for more than 5 hours, thereby obtaining the ternary semiconductor nano crystal PbSnS3. The trithio tin lead nano crystal provided by the invention has the beneficial effects of being uniform in size, high in pure phase (no impurity) and good in crystallinity. In addition, compared with a chemical method which has the defects that harsh conditions (high temperature and high pressure) are needed, a reaction precursor is toxic and the like, the preparation method has remarkable advantages that the preparation process is simple, green and environment-friendly, large-scale production can be achieved, and the like.

Description

technical field [0001] The invention belongs to the field of preparation of nanomaterials, in particular to a ternary semiconductor nanocrystalline tin-lead trisulfide (PbSnS 3 ) and their physical preparation methods. Background technique [0002] The preparation of nanomaterials is one of the research hotspots in the field of materials science. Nanomaterials have attracted extensive attention from scientists due to their significant quantum size effect, surface effect and dielectric confinement effect, which can cause changes in the properties of materials such as mechanics, electricity, magnetism, heat, optics and chemical activity. [0003] PbS (with a bandgap of 0.37eV) and SnS 2 (Band gap about 2.2eV) are two typical binary S-group compounds, in which SnS 2 It is an N-type semiconductor with a wide bandgap, and has a high light absorption coefficient in the visible region (>10 4 cm -1 ) and strong photoconductive properties make it a suitable light-absorbing ma...

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Problems solved by technology

Usually PbSnS 3 The preparation methods of PbSnS include direct element mixing and heat treatment, both of which need to be carried out in a vacuum-sealed quartz bottle, and the reaction temperature needs to exceed 600 ° C, and the chemical method reported in the literature is PbSnS 3 Nanorods and thin films, but the characteristics of nanocrystals can only be fully reflected when their size and shape have good monodispersity. Therefore, in order to make nanomaterials enter the application field, the preparation process of nanomaterials must be solved first. To obtain stable and reliable nanomaterials with size, shape, dimension and monodispersity

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