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Reading circuit of image sensor

A technology of image sensor and readout circuit, applied in the field of image sensor, can solve the problems that are not conducive to the signal-to-noise ratio

Inactive Publication Date: 2010-09-22
HIMAX IMAGING LIMITED
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

figure 2 In the readout structure of the traditional image sensor with combining function shown, the signal combining after the line amplifier CA will be detrimental to its signal-to-noise ratio (SNR)

Method used

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  • Reading circuit of image sensor

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Embodiment Construction

[0015] image 3 The readout structure of the image sensor with horizontal combination function according to the embodiment of the present invention is shown. The image sensor may be, but is not limited to, a Charge Coupled Device (CCD) or Complementary Metal Oxide Semiconductor (CMOS) sensor for converting an image of visible light into an electronic signal. The readout structure of this embodiment can be applied to digital image processing devices, such as (but not limited to) cameras or video cameras.

[0016] In this embodiment, each row (col1, col2...) or bit line (bit line) of the image sensor is respectively electrically coupled to the multiplexer via a capacitor Cn and a switch phin (n=1, 2...). input to the MUX. For simplicity, the same symbols are used for transistors (or switches) and their control signals in the drawings. One of the plates of the capacitor Cn is coupled to each row (col1, col2...), and the switch phin (n=1, 2...) is coupled between the other plat...

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Abstract

The invention relates to a reading circuit of an image sensor. The reading circuit comprises at least one column amplifier (CA), and when the column amplifier is reset, a column amplifier reset signal is generated. Capacitors and switches are connected to column nodes of the image sensor. Multiplexers are coupled between the capacitors / switches and the input of the column amplifier. A correlated double sampling (CDS) circuit then receives the output of the column amplifier.

Description

technical field [0001] The present invention relates to an image sensor, in particular to a readout structure of an image sensor with a horizontal binning function. Background technique [0002] Semiconductor image sensors (such as charge-coupled device (CCD) or complementary metal-oxide-semiconductor (CMOS) sensors) are commonly used in cameras or video cameras to convert visible light images into electronic signals for subsequent storage, transmission or display. [0003] For today's image sensor, it uses a column amplifier (column amplifier, CA) to read out the image signal of each row. One of the reasons why the signal is given gain in the front stage of the analog chain is to obtain a better signal-to-noise ratio (SNR). figure 1 The readout structure of a conventional image sensor is shown, where each row (col1, col2...) is connected to a corresponding row amplifier (CA1, CA2...). Next, the signals are sequentially transmitted to a programmable gain amplifier (PGA) th...

Claims

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Application Information

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IPC IPC(8): H04N3/15H04N5/217
Inventor 邱伯舜印秉宏
Owner HIMAX IMAGING LIMITED