Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nanometer or micron devices in controllable mode

A micro-device, nano-technology, applied in the nano field, can solve complex equipment, high cost and other problems

Active Publication Date: 2011-10-05
江苏南邮智慧城市研究院有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As we all know, these research methods require expensive and complicated equipment, which cannot be achieved by ordinary research groups.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] 1. Configure 0.5mol / L ZnCl in the container 2 solution, gradually add NH 3 ·H 2 0 to pH=10.3, put it into a cleaned glass plate, seal the container and place it in a constant temperature drying oven at 90°C for 4 hours to obtain ZnO nano / microrods with a length of more than 30 μm.

[0020] 2. Use a layer of metal aluminum film on the glass substrate by magnetron sputtering, and then use an extremely sharp knife to carve a slit of 8 μm to form an electrode.

[0021] 3. Dielectrophoresis is used to build a single ZnO nano / micro structure. The specific steps are as follows:

[0022] a. Place the glass substrate growing ZnO nano / microrods in a small amount of alcohol solution for 15 minutes sonication, so that the ZnO nano / microrods are completely dispersed in the alcohol solution;

[0023] b. Take out the glass substrate, add alcohol again to prepare a solution with a moderate concentration of ZnO, and then sonicate for 15 minutes, so that the ZnO nano / micro rods are ev...

Embodiment 2

[0027] 1. Configure 0.5mol / L ZnCl in the container 2 solution, gradually add NH 3 ·H 2 0 to pH=10.5, put into a cleaned glass negative, seal the container and place it in a constant temperature drying oven at 80°C for 3 hours to obtain clean ZnO nano / micro rods with a length of more than 25 μm.

[0028] 2. Use a layer of metal aluminum film on the glass substrate by magnetron sputtering, and then use an extremely sharp knife to carve a slit of 10 μm to form an electrode.

[0029] 3. Dielectrophoresis is used to build a single ZnO nano / micro structure. The specific steps are as follows:

[0030] a. Place the glass substrate growing ZnO nano / microrods in a small amount of alcohol solution for 15 minutes sonication, so that the ZnO nano / microrods are completely dispersed in the alcohol solution;

[0031] b. Take out the glass substrate, add alcohol again, and prepare a solution with a moderate concentration of ZnO, and then sonicate for 15 minutes, so that the ZnO nano / micro s...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing single (a plurality of) zinc oxide (ZnO) nanometer or micron devices in a controllable mode. A ZnO nanometer / micro stick with the diameter of about 100-300nm and the length of 20-30 microns is grown by utilizing a hydrothermal method, and the single ZnO stick is assembled between electrodes in a controllable mode by using a dielectrophoresis method under a microscope. The invention well solves two difficult problems of separating single nanometer material in a ZnO nanometer / micron material device and building the nanometer device in a controllable mode. The nanometer / micron device can be applied to gas sensing, ultraviolet sensing, biology sensing (such as intelligent medicament capsules) and other nanometer / micron devices.

Description

technical field [0001] The invention relates to the field of nanotechnology, in particular to a method for controllably preparing a single or several ZnO nano sensor devices. Background technique [0002] Nanomaterials, especially one-dimensional nanomaterials, are ideal for manufacturing high-sensitivity nanosensors due to their large specific surface area and easy formation of controllable current channels. Scientists around the world have achieved a large number of encouraging experimental results in this regard, such as using nanowires, nanotubes, nanobelts, etc. to make highly sensitive sensors for biology, gas, chemistry, and ultraviolet light. In sensor research, the high sensitivity of the sensor is the first pursuit of scientists. Taking gas sensors as an example, people try to increase the sensing sensitivity by growing materials with novel morphology, or making specific functional materials form a network structure, or modifying the surface of materials with poly...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B82B3/00
Inventor 魏昂黄维潘柳华
Owner 江苏南邮智慧城市研究院有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com