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Method for ion diffusion and semiconductor device formation

An ion diffusion and semiconductor technology, applied in the field of ion diffusion and semiconductor device formation, can solve the problems of reducing the performance of semiconductor devices, poor ion stability, and inability to achieve localized ion concentration distribution. accelerated effect

Inactive Publication Date: 2010-10-20
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

However, due to the high temperature, multiple ion dislocations and displacements will be alternately replaced, so that after diffusion, the concentration distribution of ions cannot meet the requirements of localization, and the stability of ions is poor, which reduces the performance of semiconductor devices.

Method used

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  • Method for ion diffusion and semiconductor device formation
  • Method for ion diffusion and semiconductor device formation
  • Method for ion diffusion and semiconductor device formation

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Embodiment Construction

[0024] The invention puts the ion implantation layer into the ultrasonic liquid tank to make the ion diffusion uniform. The speed of ultrasonic transmission in the liquid is fast, and the liquid can be vibrated without raising the temperature of the liquid. Driven by the vibration energy, the ions can diffuse evenly, and the diffusion speed is accelerated, which reduces the process cost and improves the process efficiency. .

[0025] Figure 4 It is a specific implementation flow chart of an ion diffusion method of the present invention. Such as Figure 4 As shown, step S1 is performed to implant ions into the layer to be implanted to form an ion implanted layer.

[0026] The layer to be implanted may be a semiconductor substrate, a metal layer, or a gate. Typically, the process of implanting ions in a semiconductor substrate may be in the steps of forming doped wells, source / drain extensions, and source / drains.

[0027] Execute step S2, put the ion implantation layer int...

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Abstract

The invention relates to a method for ion diffusion and semiconductor device formation, wherein the ion diffusion method comprises the following steps: implanting ions into a layer to be implanted to form an ion implanted layer; arranging the ion injection layer in an ultrasonic liquid groove to cause the ions to diffuse uniformly. In the invention, the ion injection layer is arranged in the ultrasonic liquid groove so as to cause the ions to diffuse uniformly. Transmission velocity of the ultrasonic is fast in liquid, thus liquid vibration can be generated without needing to raise liquid temperature; driven by the vibration energy, the ions can be diffused uniformly and the diffusion speed is accelerated, thereby reducing technology cost and improving technology efficiency.

Description

technical field [0001] The invention relates to a manufacturing method of a semiconductor device, in particular to a method for ion diffusion and the formation of a semiconductor device. Background technique [0002] At present, after implanting ions into the semiconductor substrate to form the source / drain or implanting ions into the metal layer, it is necessary to use a thermal annealing process to activate the ions to make the ion diffusion uniform and to repair the defects generated during the ion implantation process. The thermal annealing process rapidly heats the wafer to the set temperature within a predetermined time, and performs a short-term rapid heat treatment. The heat treatment usually takes a few minutes, and the temperature required by the process is 700-1300°C. [0003] Existing thermal annealing process is used in the process of manufacturing MOS transistors to activate implanted ions such as Figure 1 to Figure 3 shown. refer to figure 1 , provide a se...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/22H01L21/265H01L21/336
Inventor 王津洲
Owner SEMICON MFG INT (SHANGHAI) CORP
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