Satisfiability problem-based manufacturable hot spot disconnecting and rerouting method

A satisfying and manufacturable technology, applied in the field of manufacturability in physical design, can solve problems such as hotspot graphics are not easy to lithography, circuits cannot work properly, layout graphics, deformation, etc.

Inactive Publication Date: 2010-11-24
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007]The hotspot pattern is not easy to lithography, that is, it will produce seriou

Method used

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  • Satisfiability problem-based manufacturable hot spot disconnecting and rerouting method
  • Satisfiability problem-based manufacturable hot spot disconnecting and rerouting method
  • Satisfiability problem-based manufacturable hot spot disconnecting and rerouting method

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Embodiment Construction

[0161] This method has been developed and implemented in the UNIX environment using C++ language. The implemented program is based on the layout of the completed detailed wiring, by searching the hot program to count the number and location information of the hotspots in the layout, and finally a new layout with completely eliminated or greatly reduced hotspots is given as output.

[0162] The following describes the workflow of the program:

[0163] 1. Computer initialization.

[0164] The input of the program is the layout information of the detailed wiring and all the hotspot information contained in the layout, among which:

[0165] The layout is represented as a two-dimensional array [v i, j ] I×J To achieve, the size of the two-dimensional array is equal to the grid number I×J of the layout, and the grid v i, j The size of is equal to a set line spacing plus a set line width, i represents the row number of the grid, j represents the column number of the grid, i=1, 2,..., I, j...

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Abstract

The invention relates to a satisfiability problem (SAT)-based manufacturable hot spot disconnecting and rerouting method which belongs to the very large scale integration (VLSI) physical design field. The method is characterized in that the topological structure constraint of hot spot and connectivity constraint of line networks are used as directions, SAT constraints are established in all the rerouted line networks in the region, the constraint problem is solved to route a plurality of line networks at the same time, and the generation of a new manufacturable hot spot can be effectively controlled. Meanwhile, as the method adopts the region-based disconnecting and rerouting strategy to ensure the efficiency; and the hot spot elimination ratio in the layout can be greatly increased through the dynamic marginal adjustment and the two-stage disconnecting and rerouting process involving offset. The experimental result proves that the method can fast and effectively eliminate the manufacturable hot spot in the layout; compared with the traditional disconnecting and rerouting algorithm aiming at the hot spot, the method has better convergence, and can more effectively avoid the generation of the new hot spot and ensure to find an existing and feasible rerouting scheme.

Description

Technical field [0001] The SAT method based on the manufacturability problem and the method of disassembly and relocation for manufacturability hotspots belongs to the technical field of VLSI physical design, especially the technical category of manufacturability problems in physical design. This method is dedicated to solving the problem of hot patterning under deep sub-micron and even nanometer processes through SAT-based wire removal and redistribution, and has an important impact on manufacturability and product yield. Background technique [0002] 1. The need to solve manufacturability issues, especially manufacturability hotspots [0003] As the minimum feature size of ultra large scale integrated circuits (ULSI) is getting smaller and smaller, it is even shorter than the wavelength of the exposure light source. For example, the wavelength of the light used in the current exposure is 193nm, but the line width of the pattern to be manufactured is 65nm or even smaller, and the...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 蔡懿慈周强杨帆
Owner TSINGHUA UNIV
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