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Circular ring-shaped member for plasma process and plasma processing apparatus

A processing device and plasma technology, which are applied in the manufacturing of electrical components, semiconductor/solid-state devices, discharge tubes, etc., can solve the problems of low plasma resistivity and non-uniformity of plasma density, and achieve the effect of improving uniformity.

Inactive Publication Date: 2010-12-01
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, there is such a problem that the resistivity of the plasma becomes low in the part where the plasma density is high, and the current is concentrated on the part where the plasma density is high in the opposite electrode, so that the difference in plasma density is low. Uniformity is more serious
However, in order to set the etching rate and deposition rate at the end of the wafer to desired values, it is necessary to adjust the electric field distribution on the peripheral upper surface of the end of the wafer to a desired value, but Patent Document 3 cannot solve this problem.

Method used

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  • Circular ring-shaped member for plasma process and plasma processing apparatus
  • Circular ring-shaped member for plasma process and plasma processing apparatus
  • Circular ring-shaped member for plasma process and plasma processing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0066] prepare two figure 2 The current collecting ring 5 shown in (b) is used as the current collecting ring assembled into the plasma processing device 1 . A heat conducting sheet with a thermal conductivity of 1W / MK is embedded almost without gap in the groove 51 of one of the collector rings. Hereinafter, in this specification, the collector ring in which the thermally conductive sheet having a thermal conductivity of 1W / MK is buried almost without gaps is referred to as a groove-forming collector ring 1W type. In addition, a thermally conductive sheet having a thermal conductivity of 17 W / MK was buried almost without gaps in the groove 51 of the other collector ring. Hereinafter, in this specification, the collector ring in which the thermally conductive sheet having a thermal conductivity of 17W / MK is buried almost without gaps is referred to as a groove-forming collector ring 17W type. and, prepare figure 2 A conventional collector ring shown in (a) was used as a c...

Embodiment 2

[0077] Next, the characteristics of the sputtering speed were investigated, and two types of collectors, the groove-forming collector 1W type and the groove-forming collector 17W type, were prepared as the collector 5 incorporated in the plasma processing apparatus 1 in the same manner as in Example 1. , And, a conventional type of flow collecting ring was prepared as a comparative example of the above two flow collecting rings.

[0078] Three blank wafers with a diameter of 300 mm were prepared in the same manner as in Example 1. Then, the plasma processing chamber was decompressed to 35 mTorr, supplied by Ar / O 2 (1225 / 15) processing gas, the non-patterned wafer was provided with a conventional type of flow focusing ring, groove forming flow focusing ring 1W type, and groove forming flow focusing ring 17W type, and plasma treatment was performed for 60 seconds. In addition, the temperature of the upper electrode / the wall surface temperature of the processing chamber / the bott...

Embodiment 3

[0085] Next, the characteristics of the deposition rate were investigated, and in the same manner as in Examples 1 and 2, two types of collectors, the groove-forming collector 1W type and the groove-forming collector 17W type, were prepared as collectors to be incorporated into the plasma processing apparatus 1. 5. Prepare a conventional collector ring as a comparative example of the above two collector rings.

[0086] Prepare three unpatterned wafers with a diameter of 300 mm. Depressurize the plasma processing chamber to 35 mTorr, supplied by C 4 f 6 / Ar(18 / 1225) processing gas, the conventional type of flow collector, groove forming flow focusing ring 1W type, and groove forming flow focusing ring 17W type were installed on the non-patterned wafer, and the plasma treatment was performed for 60 seconds. In addition, the temperature of the upper electrode / the wall surface temperature of the processing chamber / the bottom surface temperature of the electrostatic chuck at this...

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Abstract

A plasma processing apparatus includes a processing chamber the inside of which is maintained in a vacuum; a mounting table configured to mount a target substrate and serve as a lower electrode in the processing chamber; a circular ring-shaped member provided at the mounting table so as to surround a peripheral portion of the target substrate; an upper electrode arranged to face the lower electrode thereabove; and a power feed unit for supplying a high frequency power to the mounting table. The apparatus performs a plasma process on the target substrate by plasma generated in the processing chamber. The circular ring-shaped member includes at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space, and the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.

Description

technical field [0001] The present invention relates to an annular member for plasma processing surrounding the periphery of a substrate to be processed which is subjected to plasma processing in a plasma processing chamber, and a plasma processing apparatus having the annular member for plasma processing. Background technique [0002] Plasma processing apparatuses are widely used as apparatuses for etching, deposition, oxidation, sputtering, and the like in the manufacturing process of semiconductor devices and FPDs (Flat Panel Displays). As one of the plasma processing apparatuses, a plasma etching apparatus has an upper electrode and a lower electrode arranged in parallel in a processing container or a reaction chamber, and a substrate to be processed (semiconductor wafer, glass substrate, etc.) is placed on the lower electrode, basically A high-frequency voltage for plasma generation is applied to the upper electrode, to the lower electrode, or to both the upper electrod...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/00
CPCH01J37/32642H01J37/32091
Inventor 八田浩一水野秀树
Owner TOKYO ELECTRON LTD