Semiconductor device

Abstract

Provided is a semiconductor device which is capable of preventing an increase in power consumption of an SGT, i.e., a three-dimensional semiconductor transistor, due to an increase in off-leak current. The semiconductor device comprises: a first-conductive type first silicon pillar: a first dielectric surrounding a side surface of the first silicon pillar; a gate surrounding the dielectric; a second silicon pillar provided underneath the first silicon pillar; and a third silicon pillar provided on a top of the first silicon pillar. The second silicon pillar has a second-conductive type high-concentration impurity region formed in a surface thereof except at least a part of a contact surface region with the first silicon pillar, and a first-conductive type impurity region formed therein and surrounded by the second-conductive type high-concentration impurity region. The third silicon pillar has a second-conductive type high-concentration impurity region formed in a surface thereof except at least a part of a contact surface region with the first silicon pillar, and a first-conductive type impurity region formed therein and surrounded by the second-conductive type high-concentrationimpurity region of the third silicon pillar. The first-conductive type impurity region of each of the second silicon pillar and the third silicon pillar has a length greater than that of a depletion layer extending from a base portion of the second-conductive type high-concentration impurity region of a respective one of the second silicon pillar and the third silicon pillar.

Description

technical field [0001] The present invention relates to a semiconductor device, more specifically, to a semiconductor device of a Surrounding Gate Transistor (SGT) of a three-dimensional semiconductor. Background technique [0002] Through the miniaturization of planar transistors, it has been widely used in the fields of computers or communications, measuring equipment, automatic control devices, and living equipment as a microprocessor (micro) with low power consumption, low cost, and high information processing capability. processor), or ASIC (Application Specific Integrated Circuit, application specific integrated circuit), microcomputer (micro computer), and cheap and large-capacity memory. However, a planar transistor formed in a plane on a semiconductor substrate is formed in a plane. In other words, the source, gate, and drain are horizontally formed on the surface of the silicon substrate. In SGT, the source, gate, and drain are arranged vertically relative to the ...

AI Technical Summary

Problems solved by technology

[0014] The present invention was developed in view of the above problems, and its purpose is to solve the problem of increased power consumption caused by the increase of the standby leakage current of SGT, and its purpose is to provide a semiconductor device in which the shape of the source and drain is concave.

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