Low-temperature sintering technology suitable for high square resistance

Abstract

The invention discloses a low-temperature sintering technology suitable for high square resistance, aiming to overcome the defects that silver is deeply driven, which causes a high-conductivity phosphorous diffusion area to be closed, and the like in the prior art. The technology comprises the following steps of: regulating a square resistor to be diffused to 66-75 ohms; printing silver on the square resistor according to a wet weight of 0.4-0.6g; and traversing the square resistor through a low-temperature sintering furnace at 200-450 DEG C at a speed of 3,000-5,000mm / min for sintering. The invention can form good ohmic contact under the conditions of shallow diffused junction and low concentration and promote the short-circuit current and the open-circuit voltage, thereby overcoming the defect of low conversion efficiency brought by a dead horizon effect; the silver and silicon can form a good ohmic contact at low temperature to obtain lower serial resistance and higher fill factors and short-circuit current; and the ohmic contact with an N type diffusion region can be realized through sintering and traversing without damaging nearby junction regions.

Description

technical field [0001] The invention relates to silver paste and low-temperature sintering process, especially for improving short-circuit current and open-circuit voltage of silicon-based batteries, and reducing series resistance, which is suitable for high square resistance (square resistance is the abbreviation of square resistance, high square resistance is high resistance value) The abbreviation of square resistance, in the present invention, high square resistance refers to the low-temperature sintering technology of square resistance above 60 ohms). Background technique [0002] The printing and sintering of silver grid lines is particularly important in silicon-based solar cells, and its influence on the performance of the cell is mainly reflected in the series resistance, and thus also in the fill factor. [0003] In terms of scale, silver is driven too deep in the traditional process, and the electrons collected by the PN junction where it is located can hardly pas...

AI Technical Summary

Problems solved by technology

Unfortunately, however, the most densely diffused regions of phosphorus are near the surface of the wafer

Therefore, if the silver is driven too deep, on the one hand, the highly conductive phosphorus diffusion region will be closed; very high

Moreover, the dead layer effect caused by high diffusion concentration and high doping is very serious, and the short-circuit current and open-circuit voltage will decrease, which will affect the conversion efficiency of the cell.

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