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Placing table apparatus, processing apparatus and temperature control method

A temperature control method and a technology of a mounting table, which are applied in semiconductor/solid-state device manufacturing, gaseous chemical plating, coating, etc., and can solve problems such as damage to the mounting table

Active Publication Date: 2012-05-23
TOKYO ELECTRON LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, as mentioned above, the mounting table and the legs supporting the mounting table are made of ceramic materials such as AlN (aluminum nitride), but this ceramic material is a brittle material, so the temperature distribution between the inner and outer circumferences of the mounting table may be the cause. The thermal stress generated is easy to damage the mounting table
In particular, in the method of controlling the temperature of the heating region (heater) on the inner and outer periphery of the stage by using the current ratio and the voltage ratio depending on the process temperature, there is a problem that the ceramic stage is easily damaged.

Method used

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  • Placing table apparatus, processing apparatus and temperature control method
  • Placing table apparatus, processing apparatus and temperature control method
  • Placing table apparatus, processing apparatus and temperature control method

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Embodiment Construction

[0032] Hereinafter, embodiments of the present invention will be described with reference to the drawings.

[0033] figure 1 is a schematic cross-sectional view showing a processing apparatus according to an embodiment of the present invention, figure 2 is set in the figure 1 A plan view of the heating mechanism on the mounting table of the mounting table device included in the processing apparatus of . In addition, here, a case where a film formation process is performed on a semiconductor wafer as an object to be processed by CVD will be described as an example.

[0034] As shown in the figure, the processing apparatus 2 includes a cylindrical processing container 4 formed of, for example, nickel, a nickel alloy, or an aluminum alloy. On the top portion of the processing container 4, a shower head 6 is provided as a gas supply mechanism, and the shower head 6 has a plurality of gas ejection holes 6A, 6B on the lower surface, so that a processing gas such as a film-forming ...

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PUM

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Abstract

A placing table apparatus is provided with a placing table (26) for placing a body (W) to be processed on an upper surface; a heating mechanism (30) having a plurality of heater sections respectively arranged in a plurality of heating zones concentrically divided on the placing table (26); a leg section (28), which is connected to the center portion of the placing table (26) and horizontally supports the placing table in an upright state; temperature measuring sections (38), which are arranged corresponding to the heating zone on the innermost circumference in the heating zones; and a power supply control section (42), which controls the temperature of the heater section on the innermost circumference through feedback, based on a measurement value obtained from the temperature measuring sections (38), and controls power supply to other heater sections, at a safe power supply rate for the heater section on the innermost circumference. The safe power supply rate is determined so that a temperature difference between the heater sections on the innermost circumference is within a range where a placing table (26) does not break.

Description

technical field [0001] The present invention relates to a processing device for performing heat treatment such as film formation processing on a target object such as a semiconductor wafer, a stage device and a temperature control method used in the processing device. Background technique [0002] In order to manufacture a semiconductor integrated circuit, various processes such as film formation, etching, thermal diffusion, and modification are generally repeated on a target object such as a semiconductor wafer. [0003] For example, a single-sheet processing device that performs heat treatment on each semiconductor wafer is described as an example. In a processing container that can be evacuated, for example, a mounting table equipped with a resistance heater made of molybdenum wire is installed on the The upper ends of the legs stand up from the bottom of the container, and a semiconductor wafer is placed on this stage. Then, with the semiconductor wafer placed on the mo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/205C23C16/46H01L21/02H01L21/3065H01L21/31
CPCH01L21/67248C23C16/46H01L21/67103
Inventor 荻野贵史小松智仁
Owner TOKYO ELECTRON LTD