Manufacturing method of mask plate
A manufacturing method and a technology of a mask plate, which are applied to the photoplate-making process of the patterned surface, the original for photomechanical processing, and the exposure device of the photoplate-making process, can solve the problem of complex process, waste of man-hours, half-gray-scale mask layer, etc. Problems such as the second alignment deviation with the data design value achieve the effects of simple process flow, shortened exposure time, and shortened production cycle
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Embodiment 1
[0033] Such as Figure 4 ~ Figure 8 As shown, the manufacturing method of a mask plate provided by the embodiment of the present invention is used for the raw material structure of a substrate layer 401, a grayscale mask layer 402, an etching stopper layer 403, a base material layer 404 and a photoresist layer 405 The production of the mask template (refer to Figure 4 shown), wherein the thickness of the photoresist layer 405 is t0, the mask making method provided in this embodiment can be used to make the mask required for the production of liquid crystal display, specifically can be used for TFT-LCD, OLED or other liquid crystal display The production process of the screen, the production method includes the following steps:
[0034] (a) making the first pattern and the second pattern, using the first pattern 710 to expose the photoresist layer 405 for the first time, so that the thickness of the photoresist layer 405 in the corresponding area is reduced to t1;
[0035] (...
Embodiment 2
[0053] As an alternative to the above, something like Figure 4 , Figure 9 and Figure 10 As shown, the second pattern 820 includes the area of the first pattern 810, and the first exposure is an exposure outside the closed area of the first pattern 810, so that the photoresist outside the closed area of the first pattern 810 is thinned to t1 , the second exposure is the exposure outside the closed area of the second pattern 820, so that the thickness outside the closed area of the second pattern 820 is reduced to t2, and the overlap between the closed area of the first pattern 810 and the closed area of the second pattern 820 The thickness t0 of the photoresist remains unchanged, and the energy of the first exposure and the energy of the second exposure can be equal or not, then t2 is less than t1, and t1 is less than t0. Three regions with different thicknesses of t0, t1 and t2 are obtained, and then the region with the thinnest thickness of t2 is developed ...
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