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CCP-CPP magnetoresistive reader with high GMR value

A technology of magnetoresistive devices and magnetic layers, which can be used in field-controlled resistors, instruments, magnetic recording, etc., and can solve problems such as reduced productivity

Active Publication Date: 2011-01-05
SEAGATE TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, controlling the size of conductive channels or oxide particles in the nanometer range and controlling size variation is very difficult in conventional CCP reader designs
This issue can lead to very large sensor-to-sensor RA and GMR variations in the wafer and can lead to significant productivity loss in mass production of read / write heads

Method used

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  • CCP-CPP magnetoresistive reader with high GMR value
  • CCP-CPP magnetoresistive reader with high GMR value
  • CCP-CPP magnetoresistive reader with high GMR value

Examples

Experimental program
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Embodiment Construction

[0014] figure 1 is a layer schematic diagram of a magnetoresistive stack 10 as a current perpendicular to the plane (CPP), current confining path (CCP), giant magnetoresistance (GMR) device. The magnetoresistive stack 10 includes a seed layer 12, an antiferromagnetic (AFM) pinning layer 14, a ferromagnetic pinned layer 16, a coupling layer 18, a reference layer 20, a current limiting path (CCP) spacer layer 22, a first iron The magnetic free layer 24 , the second ferromagnetic free layer 26 and the capping layer 28 .

[0015] The seed layer 12 may be a single layer, or may be multiple layers. For example, seed layer 12 may include a first layer of NiFeCr and a second layer of NiFe.

[0016] The pinning layer 14 above the seed layer 12 is an antiferromagnetic material. Examples of antiferromagnetic materials from which pinning layer 14 may be formed include CrMnCu, CrMnPd, CrMnPt, IrMn, NiMn, NiMnCr, PdMn, PdPtMn, PtMn, and PtRuMn.

[0017] The pinned layer 16, the coupling...

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PUM

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Abstract

A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in a matrix of magnesium oxide. The spacer layer is formed by a mixture copper and magnesium oxide, which is heattreated to form the copper current confined paths within the magnesium oxide matrix.

Description

Background technique [0001] Giant magnetoresistance (GMR) and tunnel magnetoresistance (TMR) devices have been developed for high-density data storage applications. Both GMR and TMR devices feature a multilayer reader stack that includes a nonmagnetic spacer layer between two ferromagnetic layers. Typically, one of the ferromagnetic layers acts as a reference or pinned layer with a fixed magnetization, while the other ferromagnetic layer, called the free layer, has a magnetization that rotates in response to an external magnetic field. In GMR devices, the non-magnetic spacer layer is conductive. In TMR devices, the spacer layer is a very thin electrically insulating layer that forms a tunnel barrier between the free layer and the reference layer. [0002] TMR reader stacks utilizing magnesium oxide (MgO) have been used in commercial hard disk drives with areal densities as high as 500Gb / in2. As areal density increases further, reader size (reader width and reader bar height...

Claims

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Application Information

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IPC IPC(8): H01L43/12H01L43/08G11B5/39G11B5/33
CPCB82Y10/00H01L43/08H01L43/12G11B5/3906H01L43/10G11B5/3909B82Y25/00G01R33/098G11B2005/3996H10N50/10H10N50/01H10N50/85Y10T428/1114Y10T428/1143Y10T428/1121
Inventor Q·何Y·陈J·丁
Owner SEAGATE TECH LLC
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