CCP-CPP magnetoresistive reader with high GMR value
A technology of magnetoresistive devices and magnetic layers, which can be used in field-controlled resistors, instruments, magnetic recording, etc., and can solve problems such as reduced productivity
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[0014] figure 1 is a layer schematic diagram of a magnetoresistive stack 10 as a current perpendicular to the plane (CPP), current confining path (CCP), giant magnetoresistance (GMR) device. The magnetoresistive stack 10 includes a seed layer 12, an antiferromagnetic (AFM) pinning layer 14, a ferromagnetic pinned layer 16, a coupling layer 18, a reference layer 20, a current limiting path (CCP) spacer layer 22, a first iron The magnetic free layer 24 , the second ferromagnetic free layer 26 and the capping layer 28 .
[0015] The seed layer 12 may be a single layer, or may be multiple layers. For example, seed layer 12 may include a first layer of NiFeCr and a second layer of NiFe.
[0016] The pinning layer 14 above the seed layer 12 is an antiferromagnetic material. Examples of antiferromagnetic materials from which pinning layer 14 may be formed include CrMnCu, CrMnPd, CrMnPt, IrMn, NiMn, NiMnCr, PdMn, PdPtMn, PtMn, and PtRuMn.
[0017] The pinned layer 16, the coupling...
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