Preparation method of nano copper film-based copper nano structure

A nano-copper and copper nano-technology, applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems that have not been found in relevant reports, and achieve the effect of simple annealing treatment method and clear mechanism

Inactive Publication Date: 2011-01-19
CHANGZHOU UNIV
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Problems solved by technology

However, in the current literature, we have not yet found any related reports similar to the present invention

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  • Preparation method of nano copper film-based copper nano structure
  • Preparation method of nano copper film-based copper nano structure
  • Preparation method of nano copper film-based copper nano structure

Examples

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Embodiment 1

[0020] 1) Preparation of the glass substrate: take a few microscope slides and place them in alcohol for ultrasonic cleaning for 15 minutes, then rinse them repeatedly with deionized water, and then use an electric fan to place the slides front and back at a grazing angle of about 20°. Dry the residual moisture on both sides in one direction, and finally place the glass slide in an oven at 100°C for 15 minutes, and select the cleanest glass slide as the substrate for depositing the nano-copper film;

[0021] 2) Preparation of nano-copper film: place the prepared glass substrate in a magnetron sputtering chamber, install a copper target with a purity of 99.99%, and vacuum the chamber to 5.0×10 -4 Pa, then pass through high-purity Ar gas with a flow rate of 20sccm and a purity of 99.999%, maintain the chamber pressure at 0.5Pa, adjust the sample disk speed to 2r / min, adjust the DC sputtering power to 100W, and remove the baffle at room temperature Start to deposit the copper fil...

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Abstract

The invention discloses a preparation method of a nano copper film-based copper nano structure, which relates to a preparation and assembly method of a nano structure. The method comprises the following steps: cleaning glass substrates, placing in a magnetron sputtering chamber, depositing a nano copper film of an appropriate thickness at room temperature, slicing the glass substrates into multiple pieces, carrying out high vacuum annealing of different time lengths, controlling the annealing time to directly form copper nano structures of various shapes on the surface of the nano copper film, and using a field emission scanning electronic microscope to photograph and record the surface topography of the nano copper film in multiple positions on one glass substrate so as to obtain the characteristics of the typical nano copper film and the copper nano structure on the surface thereof. From the perspective of nano curvature effect and thermal activation effect for the first time, the invention realizes the direct controllable preparation of various nano copper film-based copper nano structures on the surface of the nano copper film by carrying out annealing of different time lengths on the nano copper film of an appropriate thickness.

Description

technical field [0001] The invention relates to a method for preparing a nanostructure, in particular to a method for preparing a nanocopper film-based copper nanostructure. Background technique [0002] Copper has gradually become the mainstream interconnection material for microelectronic devices such as VLSI due to its lower resistivity and good electromigration properties than aluminum (see literature: 1.Murarka SP, Mater.Sci.Engineer, 1997, 19 (3- 4): 85). With the gradual improvement of the degree of integration of microelectronic devices, it is necessary to further reduce the size of copper materials and controllable synthesis and assembly of copper materials in the nanoscale range. There have been many related studies on the preparation of various low-dimensional copper nanostructures. for example, et al. by increasing the deposition temperature on SiO 2 Island-shaped copper particles were prepared on the surface (see literature: 1. J, Polcak J, Kolibal M et a...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/18C23C14/58
Inventor 苏江滨李论雄金旦谢建生
Owner CHANGZHOU UNIV
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