A
system for the fabrication of ε-phase MnAl / Co
bilayer thin films, consisting of: a) a high-frequency magnetron
sputtering system for the deposition of multilayer thin films on a
silicon substrate, the
sputtering system comprising: • a system for maintaining base pressure, configured to maintain a
constant pressure; • three 2-inch targets consisting of MnAl, Co and Ta; and • a substrate rotation mechanism configured to rotate the substrate at a constant number of
revolutions per minute; b) a layer deposition unit that is operationally connected to the RF magnetron
sputtering system and enables the sputtering system to deposit
layers sequentially: • a 3 nm thick Ta buffer layer on the
silicon substrate; • a 60 nm thick MnAl layer on the Ta buffer layer; • a Co layer with a thickness of 1 nm to 5 nm on the MnAl layer; and • a 5 nm thick Ta top layer on the Co layer; c) an annealing furnace configured to anneal the deposited Ta and MnAl
layers for 2 hours at 600 °C before the Co layer is deposited; and d) a characterization unit for analyzing the produced thin films, wherein the characterization unit comprises the following: • an X-
ray diffraction (XRD) system for structural characterization; • an optical 3D
profilometer for measuring
surface structure and mean roughness; and • a field emission
scanning electron microscope (FESEM) with energy-dispersive X-
ray spectrometer (EDS) for analyzing surface morphology and
elemental composition.