The invention relates to the technical field of high-
voltage tests, in particular to a method for detecting the
electrical transport characteristic and structure of a two-dimensional
chalcogenide under
high voltage, which comprises the step of preparing a WS2-xSe2 polycrystalline sample by adopting a
solid-
phase reaction method. The pure WS2-xSe2 polycrystal sample is successfully prepared by utilizing a
solid-
phase reaction method, the influence of the temperature-resistance and
magnetic field-resistance effects of the WS2-xSe2 polycrystal under
high pressure is researched, a detailed reference experiment method is provided for detecting the
electrical transport characteristics of the two-dimensional
chalcogenide, and meanwhile, the method has the advantages that the method is simple and convenient to operate, and the application prospect is wide. The phase contained in the material and the
crystal structure corresponding to the phase are determined by comparing the positions and heights of three strong
diffraction peaks, a field emission
scanning electron microscope, a transmission
electron microscope,
electron back scattering
diffraction and an
electron probe technology on the prepared
powder and block material by using an XRD (X-
Ray Diffraction) characterization detection technology. The characterization of the distribution condition of the second phase for preparing the WS2-xSe2 polycrystalline sample is detected, and a detailed reference experiment method is provided for detecting the structure of the two-dimensional
chalcogenide.