To provide a composition for chemical mechanical
polishing and a
polishing method that effectively suppress
contamination of foreign matters during manufacturing and polish the surface of a
semiconductor substrate to a flat surface.SOLUTION: The composition for chemical mechanical
polishing according to the present invention contains
abrasive grains including silica and a
liquid medium, wherein when the
aspect ratio of
abrasive grains is x, which is the ratio x2 / x1 of the short
diameter x1 and the long
diameter x2 measured by
field emission scanning electron microscopy, and the aggregation ratio is y, which is the ratio y2 / y1 of the average primary particle
diameter y1 calculated from the BET specific surface area and the average secondary particle diameter y2 measured by the DLS method, x / y is 0.63 to 0.75, and the
abrasive grain has at least one functional group selected from the functional groups represented by the following general formulae (1) to (4), -SO3-M+ (1), -COO-M+ (2), -NR1R2 (3), -N+R1R2R3M- (4), M+ represents a monovalent cation, M- represents an anion, and R1 to R3 each independently represent a
hydrogen atom or a substituted or unsubstituted
hydrocarbon group.SELECTED DRAWING: None