ZnO/CdO composite film with low resistivity

Abstract

The invention discloses a ZnO / CdO composite film with low resistivity. The film is mainly prepared by the following steps: using pulsed laser deposition equipment with four target holders, wherein the target holders adopt high-purity metal Zn targets and Cd targets; depositing 10 layers of ZnO films and CdO films at intervals by the pulsed laser deposition equipment under the atmosphere of 10 pascal oxygen and 300DEG C of the base temperature so as to form a composite film structure. According to the method disclosed by the invention, the ZnO / CdO composite film is prepared on a quartz glass substrate by a pulsed laser deposition method; the phase composition, the crystal structure and the crystal of the film are identified by an X-ray diffractometer, and the best film is selected; an JSM6700F field emission scanning electron microscope which is produced by the Japanese Shi-madzu company is used to observe the surface appearance of the film, and besides, an energy spectrum which is matched with the field emission scanning electron microscope is used to analyze the component content of the film. The film consists of ZnO and CdO two-phase nano crystalline grains, and the size of the crystalline grains gradually decreases while the CdO increases; all the ZnO / CdO has high transmittance within a visible light range. The more important is that the ZnO / CdO composite film keeps the light-emission characteristic of ZnO, namely the conventional ultraviolet light-emission characteristic is presented, and the position of a photoluminescence peak is not changed; besides, the optical characteristic of the ZnO is maintained, the ZnO / CdO composite film has low resistivity, and the resistivity can reach 10-2-10-3 omega.cm, which is close to the resistivity of a pure CdO film.

Description

technical field [0001] The invention relates to the technical field of preparation of composite thin films, in particular to a preparation method of low-resistivity ZnO / CdO composite thin films. Background technique [0002] TCO thin films can be widely used, mainly relying on their unique electrical conductivity and light transmittance. Therefore, many researchers have used different methods to optimize the performance of improved TCOS thin films. Among these thin films, ZnO is one of the most important materials. However, ZnO has high resistivity and poor electrical conductivity. In order to reduce the resistivity of ZnO thin films, many traditional metal doping methods are used to prepare transparent conductive thin films with low resistivity. However, the photoluminescence peak of the doped ZnO film prepared by the traditional doping method shifted, because the original ZnO intrinsic optical bandgap width was changed after Zn atoms were replaced by dopant atoms. There...

AI Technical Summary

Problems solved by technology

However, ZnO has high resistivity and poor electrical conductivity. In order to reduce the resistivity of ZnO thin films, many traditional metal doping methods are used to prepare transparent conductive thin films with low resistivity.

However, the photoluminescence peak of the doped ZnO film prepared by the traditional doping method shifted, because the original ZnO intrinsic optical band gap was changed after the Zn atoms were replaced by dopant atoms.