N-type field effect transistor, metal gate and manufacturing method thereof

Abstract

A semiconductor device structure, for improving the metal gate leakage within the semiconductor device. A structure for a metal gate electrode for a n-type Field Effect Transistor includes a capping layer; a first metal layer comprising Ti and Al over the capping layer; a metal oxide layer over the first metal layer; a barrier layer over the metal oxide layer; and a second metal layer over the barrier layer.

Description

technical field [0001] The present invention relates to the manufacture of integrated circuits, and more particularly to a semiconductor element having a metal gate. Background technique [0002] As the size of transistors shrinks, the thickness of the gate oxide layer must also be reduced to maintain the performance of the reduced gate length. The high dielectric constant (high-k) gate insulating layer can have a larger actual physical thickness under the same equivalent gate oxide thickness to reduce gate leakage current. [0003] In addition, as technology nodes continue to shrink, some IC designs need to replace traditional polysilicon gates with metal gates to improve device performance. In a process called "gate last", the final metal gate is formed at the last stage to reduce the number of processes (such as high temperature processes) that must be performed after the gate is completed. [0004] figure 1 A partial cross-sectional view of a conventional high-k / metal...

AI Technical Summary

Problems solved by technology

The formation of the intermetallic compound 124 can cause problems, such as forming a leakage path for the gate structure 101, thereby increasing device instability and / or device failure

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