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Non-volatile memory element

A non-volatile storage and component technology, applied in the direction of electrical components, information storage, static memory, etc., can solve undisclosed problems

Inactive Publication Date: 2012-11-14
PANASONIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, from the viewpoint of the principle of resistance change operation, a design method of a nonvolatile memory element capable of operating at a low voltage has not yet been disclosed.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0065] [Structure of nonvolatile memory element]

[0066] figure 1 It is a cross-sectional view illustrating a configuration example of a nonvolatile memory element in a state (initial state) before the start of the resistance change operation according to Embodiment 1 of the present invention.

[0067] Such as figure 1 As shown, the nonvolatile memory element 100 includes: a substrate 101; an oxide layer 102 formed on the substrate; a lower electrode layer 103 formed on the oxide layer 102; a lower electrode layer 103 formed on the lower electrode layer 103 the first metal oxide layer 104; the second metal oxide layer 105 formed on the first metal oxide layer 104; and the upper electrode layer 106 formed on the second metal oxide layer 105. The variable resistance layer 107 in the nonvolatile memory element 100 is composed of the first metal oxide layer 104 and the second metal oxide layer 105 .

[0068] Here, structurally, the first metal oxide layer 104 includes a firs...

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Abstract

In a non-volatile memory element (100), a resistance change layer (107) comprises a first metal oxide MOx and a second metal oxide MOy. The reaction energy of the chemical reaction represented by chemical reaction formula (13) involving said first metal oxide, said second metal oxide, oxygen ions and electrons is 2 eV or less. The combination (MOx, MOy) of MOx and MOy is a combination selected from a group comprising (Cr2O3, CrO3), (Co3O4, Co2O3), (Mn3O4, Mn2O3), (VO2, V2O5), (Ce2O3, CeO2), (W3O8, WO3), (Cu2O, CuO), (SnO, SnO2), (NbO2, Nb2O5), and (Ti2O3, TiO2). (13).

Description

technical field [0001] The present invention relates to a nonvolatile memory element, and more particularly to a variable resistance nonvolatile memory element whose resistance value changes according to an applied electrical signal. Background technique [0002] In recent years, with the advancement of digital technology, the functionality of electronic devices such as mobile information devices and information home appliances has further increased. Therefore, there are increasing demands for increasing the capacity of the nonvolatile memory element, reducing writing power, speeding up writing / reading time, and increasing the lifetime. [0003] In response to these demands, it is well known that there is a limit to the miniaturization of flash memory utilizing conventional floating gates. On the other hand, in the case of a nonvolatile memory element (variable resistance memory) using a variable resistance layer as a material of a memory portion, it can be configured as a ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/10H01L45/00H01L49/00
CPCH01L27/2436G11C2213/32H01L45/08H01L45/1675G11C2213/34H01L45/1625H01L45/1233G11C13/0007H01L45/146H10B63/30H10N70/24H10N70/026H10N70/8833H10N70/063H10N70/826
Inventor 二宫健生高木刚魏志强
Owner PANASONIC CORP