Impedance matching method and plasma processing equipment

A technology for impedance matching and processing equipment, applied in the field of microelectronics, can solve the problems of poor matching path, low matching accuracy, and long matching time of the actuator, and achieve the effect of efficient application, improved calculation accuracy, and impedance matching.

Active Publication Date: 2011-02-02
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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Problems solved by technology

In this way, if the impedance matching is performed according to the value of the load impedance, the matching path of the actuator in the above-mentioned RF transmission system will be poor, the matching time will be long, and the matching accuracy will be low; the impedance matching device will not be able to realize the internal impedance of the RF power supply and Impedance matching between load impedances

Method used

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  • Impedance matching method and plasma processing equipment
  • Impedance matching method and plasma processing equipment
  • Impedance matching method and plasma processing equipment

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Embodiment Construction

[0040] The technical core of the present invention is: considering the problem that the analog circuit in the sensor will drift over time, the sensor output value is obtained during the process gap time, and it is used as the sensor output in the next process / procedure The static reference value of the model, in order to replace the static reference value of the constant quantity adopted in the background technology with the static reference value that changes with time, thus can obtain the voltage V and the current I on the radio frequency transmission line more accurately, and then more Accurately obtain the load impedance value, and accordingly realize the impedance matching between the internal impedance of the RF power supply and the load impedance.

[0041] In order to enable those skilled in the art to better understand the technical solutions of the present invention, the impedance matching method and plasma processing equipment provided by the present invention will be...

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Abstract

The invention provides an impedance matching method. The method comprises the following steps of: in a process time slot, reading the output value of a sensor in a state that a radio frequency power source output power is zero, wherein the output value serves as the static reference value of a sensor output model in the subsequent process; in the process, acquiring the practical load impedance according to the sensor output model, the static reference value and the sensor output, and adjusting an adjustable impedance element in a matcher so as to realize the impedance matching in plasma processing equipment; and repeating the steps until the whole process is finished. The invention also provides the plasma processing equipment. The impedance matching method and the plasma processing equipment can stably, effectively and accurately realize the impedance matching in the plasma processing equipment, so that the reflection power on a radio-frequency transmission line is relatively low andthen the radio frequency power source output power is applied to a plasma technical chamber more effectively.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an impedance matching method and plasma processing equipment applying the method. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. At present, in the field of processing / processing of semiconductor devices, plasma etching technology and plasma deposition technology are often required, and these technologies are usually implemented by means of plasma processing devices such as plasma etching machines. [0003] In a plasma processing apparatus, an RF power supply supplies power to a process chamber to generate a plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01J37/32
Inventor 张文雯
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
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