Impedance matching method and plasma processing equipment

Abstract

The invention provides an impedance matching method. The method comprises the following steps of: in a process time slot, reading the output value of a sensor in a state that a radio frequency power source output power is zero, wherein the output value serves as the static reference value of a sensor output model in the subsequent process; in the process, acquiring the practical load impedance according to the sensor output model, the static reference value and the sensor output, and adjusting an adjustable impedance element in a matcher so as to realize the impedance matching in plasma processing equipment; and repeating the steps until the whole process is finished. The invention also provides the plasma processing equipment. The impedance matching method and the plasma processing equipment can stably, effectively and accurately realize the impedance matching in the plasma processing equipment, so that the reflection power on a radio-frequency transmission line is relatively low andthen the radio frequency power source output power is applied to a plasma technical chamber more effectively.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to an impedance matching method and plasma processing equipment applying the method. Background technique [0002] With the rapid development of electronic technology, people have higher and higher requirements for the integration of integrated circuits, which requires companies that produce integrated circuits to continuously improve the processing / processing capabilities of semiconductor devices. At present, in the field of processing / processing of semiconductor devices, plasma etching technology and plasma deposition technology are often required, and these technologies are usually implemented by means of plasma processing devices such as plasma etching machines. [0003] In a plasma processing apparatus, an RF power supply supplies power to a process chamber to generate a plasma. Plasma contains a large number of active particles such as electrons, ions, excited atoms,...

AI Technical Summary

Problems solved by technology

In this way, if the impedance matching is performed according to the value of the load impedance, the matching path of the actuator in the above-mentioned RF transmission system will be poor, the matching time will be long, and the matching accuracy will be low; the impedance matching device will not be able to realize the internal impedance of the RF power supply and Impedance matching between load impedances

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