Polycrystalline silicon producing device

Abstract

The invention provides a polycrystalline silicon producing device which comprises a chassis and a bell jar, wherein the bell jar is arranged on the chassis and forms a reactor together with the chassis; a tail gas outlet is arranged in the bell jar; a jacket is arranged outside the bell jar and provided with a jacket cooled oil inlet and a jacket cooled oil outlet; an inner member is arranged inside the reactor and comprises an intermediate connecting pipe and a jacket pipe, a polycrystalline silicon rod is arranged in the jacket pipe; and a process gas inlet, a reactor cooled oil inlet and a reactor cooled oil outlet are arranged at the bottom of the intermediate connecting pipe. Polycrystalline silicon is produced by using the polycrystalline silicon producing device, thus the growth of amorphous silicon in the reactor can be effectively reduced, the pollution of the device is decreased, and the transfer rate and the purity of the polycrystalline silicon are improved.

Description

Technical field [0001] The invention relates to a polysilicon production device, in particular to a device for producing polysilicon by silane decomposition. Background technique [0002] With the rise of solar photovoltaic, polysilicon has also become a hot industry worldwide. At present, the main method of producing polysilicon is the Siemens method. In the Siemens method, the purified and purified SiHCl3 and H2 enter the reduction furnace in a certain proportion, and the generated silicon is deposited on the silicon core of the heating element at a temperature of 1080°C to 1100°C. The main reaction equation is as follows: [0003] SiHCl3+H2——Si+3HCl [0004] 2SiHCl3——Si+SiCl4+2HCl [0005] The Siemens method achieves a low conversion rate of 10% to 20% in actual use, and the Siemens method needs to add a hydrogenation process and a tail gas treatment process after the reduction process. The entire process system is relatively complicated and the required hardware investment cost...

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Problems solved by technology

However, the patent does not disclose the production equipment of polysilicon

[0008] The decomposition reaction temperature range of silane is relatively large, which makes it easy to form amorphous silicon in general polysilicon production equipment, which not only reduces the conversion rate of silane, but also pollutes the production equipment and affects the quality of polysilicon products. purity

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