Error correction encoding method for dynamic random access memory (DRAM) buffer

A technology of error correction coding and error correction method, which is applied in the field of embedded hardware design and storage energy-saving design, can solve the problems of low efficiency and power consumption of intelligent refresh method, achieve wide commercial use, save power energy, and refresh cycle long effect

Inactive Publication Date: 2011-02-23
ZHEJIANG UNIV
View PDF2 Cites 12 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But the smart refresh method is inefficient in the idle state, because no cache line will be

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Error correction encoding method for dynamic random access memory (DRAM) buffer
  • Error correction encoding method for dynamic random access memory (DRAM) buffer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] The error correction encoding method for DRAM cache provided by the present invention will be described in further detail below in conjunction with the accompanying drawings:

[0030] figure 1 It is a flowchart of an embodiment of the present invention, and the method includes the following steps:

[0031] (1) Increase the refresh cycle and reduce the refresh frequency:

[0032] The distribution of DRAM in embedded hardware is relatively dense, and the possibility of bit data error depends heavily on the equipment material. In the power consumption of the entire system, the energy consumption required for DRAM and cache refresh accounts for a large part. Higher refresh frequency will greatly increase power consumption. In order to reduce energy consumption, the processor design considers the setting of the cache refresh cycle, too frequent will increase power consumption, and too long a cycle will easily cause data errors. Usually, it is necessary to select an optima...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an error corrosion encoding method for a dynamic random access memory (DRAM) buffer, which comprises the following steps of: (1) prolonging a refresh cycle of the DRAM buffer and reducing refresh frequency; and (2) encoding and decoding data in the buffer. In the method, refresh time is set according to the most error-prone bits, some error data is compensated by error correction technology which is powerful enough to correct a plurality of bits, which means the refresh time can be prolonged, thereby reducing power consumption.

Description

technical field [0001] The invention relates to the fields of embedded hardware design and storage energy-saving design, and in particular relates to an error correction coding method for DRAM cache. Background technique [0002] At present, advanced technology makes it possible to integrate a large embedded DRAM cache on the chip, which is denser than traditional SRAM, but the circuit must be refreshed in time to ensure data integrity, and DRAM is easily affected by equipment materials, which plays a decisive role in the refresh cycle , The power consumption point required for refresh accounts for the vast majority of the energy consumption of the entire system, so large DRAM integration brings the problem of increased refresh power consumption. [0003] The embedded DRAM cache is highly integrated and needs to be refreshed frequently. Otherwise, the information on some storage units will be lost due to power loss, making the data unavailable, and high-frequency refresh wil...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): G11C29/42
Inventor 陈天洲虞保忠乔福明马建良乐金明
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products