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Mask detection device and detection method

The technology of a detection device and detection method, which is applied in the field of mask plate detection, can solve the problems of high false alarm rate and poor operability, and achieve the effect of preventing influence and high detection accuracy

Active Publication Date: 2011-03-23
BOE TECH GRP CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the false alarm rate of the above-mentioned detection technology is very high, and the operability is not strong, and all manufacturers have given up using this solution.

Method used

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  • Mask detection device and detection method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] figure 1 It is a schematic top view structural diagram of the mask inspection device provided in Embodiment 1 of the present invention. The detection device includes a detection board 10 , a resistance block 20 and a control module 30 . Wherein, the detection board 10 is made of insulating material, such as a glass substrate. The resistance block 20 is made of a photosensitive resistive material, such as cadmium sulfide, a high-sensitivity photosensitive resistive material, and the resistance block 20 is arranged on the surface of the detection board 10. Specifically, the resistance block 20 can be plated on the detection board 10 according to a set pattern by using a deposited film or other process. On the surface, the resistance block 20 is used to accept the light irradiated on the detection plate 10 through the mask plate 40 when the detection plate 10 and the mask plate 40 are parallel and overlapped. light. The control module 30 can be a functional module reali...

Embodiment 2

[0037] image 3 It is a schematic top view structural diagram of the mask inspection device provided by Embodiment 2 of the present invention. The difference between this embodiment and Embodiment 1 is that the number of resistor blocks 20 is multiple. Moreover, the areas of the resistance blocks 20 are equal, and the area of ​​each resistance block 20 corresponds to the area of ​​one or more pixel regions. The pattern on the mask plate 40 mostly corresponds to the pixel area on the substrate to be exposed and etched, and the area of ​​the resistance block 20 on the detection plate 10 corresponds to the shape of one or more pixel areas, which can be exactly the same. Preferably, the area is slightly larger than the area of ​​one or more pixel regions, so that the pattern of the pixel regions on the mask 40 can completely fall within the range of the resistor block 20 .

[0038] The working status of the detection device in this embodiment is as follows: Figure 4 As shown, t...

Embodiment 3

[0043] Figure 7 It is a schematic structural diagram of the control module in the mask detection device provided by Embodiment 3 of the present invention. The difference between this embodiment and the second embodiment lies in the structural change of the control module 30 . The control module 30 specifically includes a resistance detection unit 31 and a resistance comparison unit 35 . Wherein, resistance detection unit 31 is connected with resistance block 20, is used for detecting the resistance value of resistance block 20, is specifically connected with each resistance block 20 respectively; Resistance value comparison unit 35 is used for comparing two resistance values ​​according to a set rule. The variation is obtained by comparison, and an alarm message is generated when it is identified that the variation is greater than or equal to the set value, and the comparison operation is stopped.

[0044] The specific working process of the control module in this embodimen...

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PUM

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Abstract

The invention provides a mask detection device and a mask detection method. The detection device comprises a detection board, a resistance block and a control module, wherein the detection board is made of an insulating material; the resistance block is made of a photosensitive resistive material and arranged on the surface of the detection board; and the control module is connected with the resistance block for detecting and identifying the resistance of the resistance block and generating alarm information when identifying that the resistance variation of the resistance block is greater than or equal to a set value. The detection method comprises the following steps of: laying the detection board of the insulating material and a mask in parallel and overlapped way; irradiating the resistance block of the detection board by emitted light through the mask; detecting and identifying the resistance of the resistance block; and generating the alarm information when identifying that the resistance variation of the resistance block is greater than or equal to the set value. By using the resistance block made of the photosensitive resistive material and combining the irradiation of exposing light, the detection of pattern variation of the mask is realized, detection accuracy is high, and the influence of the pattern variation of the mask on subsequent exposing and etching operation can be prevented.

Description

technical field [0001] The invention relates to a mask detection technology in a semiconductor device manufacturing process, in particular to a mask detection device and a detection method. Background technique [0002] In the manufacturing process of semiconductor devices such as film layers on liquid crystal display (Liquid Crystal Display; hereinafter referred to as LCD) substrates, mask etching is a common process. A mask is needed in the mask etching process. The mask has a set pattern. When exposing, the light passes through the gaps between the mask patterns so that the to-be-etched The film layer forms a corresponding pattern. It can be seen that the pattern precision on the mask determines the pattern precision of the subsequent etching of the film layer. [0003] In the actual production environment, small foreign matter particles may fall and adhere to the mask plate. When the foreign matter particles block the gaps between the patterns, it will affect the expos...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/00G03F7/20H01L21/66G03F1/84
Inventor 董云彭志龙
Owner BOE TECH GRP CO LTD