Manufacture method of semiconductor device

Abstract

The invention discloses a manufacture method of a semiconductor device, the semiconductor device includes a gate oxide and a gate electrode, which are orderly installed on a semiconductor substrate, a first sidewall layer located at two sides of the gate electrode and a second sidewall layer located at an external side of the first sidewall layer, the key is that the manufacture method comprises the following steps: etching away the second sidewall layer; and etching the first sidewall layer to form a conic shape. With the method, size of a gap between the gate electrodes is relatively expanded, so that an interlayer medium material can be deposited in a region between the gate electrodes more easily, and a problem of interlayer medium layer gap filling is effectively solved.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor device. Background technique [0002] Currently, in the manufacture of semiconductor devices, silicon nitride can be used to induce stress in the transistor channel, thereby adjusting the carrier mobility in the channel. The induced stress depends on the stress state of the silicon nitride itself and the relative position of the associated channel part. The greater the stress, the greater the mobility of carriers in the channel. Moreover, silicon nitride can also be used as an etch stop layer in subsequent processes. [0003] In order to obtain a semiconductor device with a silicon nitride layer of high tensile stress, the combination Figure 1a and 1b The manufacturing method of the semiconductor device in the prior art is described in detail. [0004] Such as Figure 1a As shown, a semiconductor substrate 100 is...

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Problems solved by technology

It should be noted that for the rapid development of sub-micron semiconductor devices, the distance between the gate and the gate is very narrow, at 120-160 nanometers, when the area between the gate and the gate is filled with ILD material , it is easy to cause uneven material filling and void defects. Figure 1c The void defect that appears in the middle dashed box

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