New bump structure

Abstract

The invention relates to a new bump structure arranged on a contact pad of an IC (Integrated Circuit) wafer. The new bump structure at least comprises a buffer layer, a multi-layer metal layer and a bump layer. The buffer layer covers the contact pad and is provided with a first opening and a second opening so as to expose part of the contact pad; the first opening and the second opening are located on the contact pad; the width sum of the first opening and the second opening is at least 1 / 3 of a side length of the contact pad; the multi-layer metal layer covers the buffer layer and the contact pad; and the bump layer covers the multi-layer metal layer. The new bump structure at least contains a buffer layer which disintegrates through an opening of the buffer layer in the engagement process and reduces the integral rigidness of the new bump structure, can solve the problem of poor engagement between the traditional golden bumps, and hereby enhances the variable range of the process and improves the yield of the products.

Description

【Technical field】 [0001] The present invention relates to a structure of a conductive bump, in particular to a structure of a bump which reduces the overall hardness of the bump. 【Background technique】 [0002] In the process application field of manufacturing liquid crystal display screens, many complicated manufacturing procedures are included. Generally speaking, liquid crystal display screens are chips that are bonded with many liquid crystal display driver chips (LCD Chip) and peripheral drive and control circuits. It is formed on a glass substrate. There are many liquid crystal display driver chips on each liquid crystal display screen, and the contact pad (Contacting Pad) on the chip must be correctly aligned and bonded with the wires on the glass substrate, and Provide good conductivity so that the liquid crystal display screen can display correct images through good signal transmission. [0003] In order to achieve the above-mentioned alignment and conductive prope...

AI Technical Summary

Problems solved by technology

Due to the traditional structural design, the metal layer 38 is quite thin, so it is easy to break the metal layer 38 when doing a probe point test, which increases the difficulty of the subsequent manufacturing process, and the polymer layer 30 is formed on the The center of the aluminum pad 22, and the metal layer 38 covers it, so the conductive area between it and the aluminum pad 22 is reduced, and during the pressing process, at the turning points 42 and 44, because the metal layer 38 is quite thin It is also easy to break, which affects the joint quality

[0008] Due to the high Young's modulus of the traditional gold bump structure, the passive protective layer will be broken during the lamination process, while the traditional composite bump structure used to solve the high Young's modulus, due to the thin metal layer, is When doing the probe point test, the metal layer will also be broken, which will adversely affect the conduction between the subsequent gold bump and the contact. Therefore, an improved bump structure is currently needed to solve the above problems.

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