The invention discloses a method for manufacturing
transistor T-shaped nanometer gate, comprising the steps of: A,
coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial
wafer, and then soft-baking; B,
coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C,
coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue UVIII on the third layer electric beam glue, and then soft-baking; E, carrying out gate cap electric beam
exposure, and sequentially developing the four layer electric beam glue UVIII, the third layer electric beam glue which is liable to realize glue-stripping and peeling; F, carrying out the gate feet electric beam
exposure, and sequentially developing the second layer electric beam glue ZEP520A and the first layer electric beam glue which is liable to realize glue-stripping and peeling; G, eroding the gate groove, evaporating and peeling off gate metals to form the
transistor T-shaped nanometer gate. Usage of the invention can easily manufacture the gate lines having small size, greatly reducing the process difficulty.