Method for producing transistor T type nano grid using once electron beam exposure
A technology of electron beam exposure and transistors, applied in the direction of optomechanical equipment, optics, circuits, etc., can solve the problems of difficult removal of electron beam glue, influence on device characteristics, poor adhesion, etc., achieve easy control of development time, increase the The effect of accurate error and strong reliability
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[0069] The method for preparing T-type nano-gates of high electron mobility transistors (HEMT) in this example is to address some shortcomings in the preparation of T-type nano-gates of high electron mobility transistors (HEMTs), using four layers of PMGI / ZEP520A / PMGI / ZEP520A Electron beam photoresist structure (as shown in Table 1) and one-time electron beam exposure method to prepare high electron mobility transistor (HEMT) T-type nano-gate.
[0070] Table 1 is a structural representation of the PMGI / ZEP520A / PMGI / ZEP520A four-layer electron beam photoresist used in the method for preparing a high electron mobility transistor (HEMT) T-type nano-gate of the present invention:
[0071]
[0072]
[0073] Table 1
[0074] In this embodiment, the first layer of electron beam glue and the third layer of electron beam glue that are easy to realize deglue and stripping are PMGI electron beam glue, which is used in the preparation method of high electron mobility transistor (HEM...
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