Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for producing transistor T type nano grid using once electron beam exposure

A technology of electron beam exposure and transistors, applied in the direction of optomechanical equipment, optics, circuits, etc., can solve the problems of difficult removal of electron beam glue, influence on device characteristics, poor adhesion, etc., achieve easy control of development time, increase the The effect of accurate error and strong reliability

Inactive Publication Date: 2009-07-08
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There must be a certain overlay error between the two electron beam exposures of the grid foot plate and the grid cap plate. For the production of nano-sized T-shaped grids, the overlay accuracy is extremely high, and the process is difficult to realize.
[0009] In addition, due to the poor adhesion between ZEP520A and the epitaxial wafer, a layer of dielectric needs to be deposited before coating. The dielectric is usually silicon nitride or silicon dioxide. After exposure and development, the dielectric at the gate groove must be etched away. , the etching of nanometer-sized thin lines is difficult to control, which greatly increases the difficulty of the process, and the underlying ZEP520A electron beam glue is difficult to remove, which is easy to affect the characteristics of the device

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing transistor T type nano grid using once electron beam exposure
  • Method for producing transistor T type nano grid using once electron beam exposure
  • Method for producing transistor T type nano grid using once electron beam exposure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment

[0069] The method for preparing T-type nano-gates of high electron mobility transistors (HEMT) in this example is to address some shortcomings in the preparation of T-type nano-gates of high electron mobility transistors (HEMTs), using four layers of PMGI / ZEP520A / PMGI / ZEP520A Electron beam photoresist structure (as shown in Table 1) and one-time electron beam exposure method to prepare high electron mobility transistor (HEMT) T-type nano-gate.

[0070] Table 1 is a structural representation of the PMGI / ZEP520A / PMGI / ZEP520A four-layer electron beam photoresist used in the method for preparing a high electron mobility transistor (HEMT) T-type nano-gate of the present invention:

[0071]

[0072]

[0073] Table 1

[0074] In this embodiment, the first layer of electron beam glue and the third layer of electron beam glue that are easy to realize deglue and stripping are PMGI electron beam glue, which is used in the preparation method of high electron mobility transistor (HEM...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for using once electric beam exposure to manufacture transistor T-shaped nanometer gate, comprising the steps of: A, coating a first layer electric beam glue which is liable to realize glue-stripping and peeling on a cleaned epitaxial wafer, and then soft-baking; B, coating a second layer electric beam glue ZEP520A on the first layer electric beam glue, and then soft-baking; C, coating a third layer electric beam glue which is liable to realize glue-stripping and peeling on the second layer electric beam glue ZEP520A, and then soft-baking; D, coating a fourth layer electric beam glue ZEP520A on the third layer electric beam glue, and then soft-baking; E, carrying out gate electric beam exposure; F, sequentially developing the four layer electric beam glue ZEP520A, the third layer electric beam glue which is liable to realize glue-stripping and peeling, the second layer electric beam glue ZEP520A and the first layer electric beam glue which is liable to realize glue-stripping and peeling; G, eroding the gate groove, evaporating and peeling off gate metals to form the transistor T-shaped nanometer gate. The invention has strong reliability, simple processes and is easy to peel off and strip the glue.

Description

technical field [0001] The invention relates to the technical field of compound semiconductors, in particular to a method for preparing a T-shaped nano-gate of a high electron mobility transistor by using an electron beam exposure technique. Background technique [0002] Gate preparation is the most critical process in the manufacturing process of High Electron Mobility Transistor (HEMT) devices. Since the gate length directly determines the frequency, noise and other characteristics of the HEMT device, the smaller the gate length, the current cutoff frequency of the device (f T ) and power gain cutoff frequency (f max ) The higher the noise figure of the device is, the smaller the noise figure of the device is. People can obtain devices with better characteristics by continuously reducing the gate length of high electron mobility transistor (HEMT) devices. [0003] As the gate length shortens, the gate resistance increases, and when the gate length decreases below 0.5 μm,...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/28H01L21/335G03F7/00
Inventor 刘亮张海英刘训春
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com